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Chin. Phys. B, 2025, Vol. 34(9): 097104    DOI: 10.1088/1674-1056/adf61d
Special Issue: TOPICAL REVIEW — Exciton physics: Fundamentals, materials and devices
SPECIAL TOPIC — Exciton physics: Fundamentals, materials and devices Prev   Next  

Probing high-energy and band-edge exciton dynamics in monolayer WS2 using transient absorption spectroscopy under near-resonant and high-energy excitations

Hang Ren(任航)1, Shuai Zhu(朱帅)1, Mingzhao Ouyang(欧阳名钊)1, Jiake Wang(王加科)1, Yuegang Fu(付跃刚)1, Chuxin Yan(闫楚欣)2, Qingbin Wang(王庆彬)2, and Yuanzheng Li(李远征)2,†
1 School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, China;
2 State Key Laboratory of Integrated Optoelectronics, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
Abstract  Insight into exciton dynamics of two-dimensional (2D) transition metal dichalcogenides (TMDs) is critical for the optimization of their performance in photonic and optoelectronic devices. Although current researches have primarily concentrated on the near-resonant excitation scenario in 2D TMDs, the case of excitation energies resonating with high-energy excitons or higher energies has yet to be fully elucidated. Here, a comparative analysis is conducted between high-energy excitation (360 nm) and near-resonant excitation (515 nm) utilizing transient absorption spectroscopy to achieve a comprehensive understanding of the exciton dynamics within monolayer WS$_{2}$. It is observed that the high-energy C-exciton can be generated via an up-conversion process under 515 nm excitation, even the energy of which is less than that of the C-exciton. Furthermore, the capacity to efficiently occupy band-edge A-exciton states leads to longer lifetimes for both the C-excitons and the A-excitons under conditions of near-resonant excitation, accompanied by an augmented rate of radiative recombination. This study provides a paradigm for optimizing the performance of 2D TMDs-based devices by offering valuable insights into their exciton dynamics.
Keywords:  monolayer WS$_{2}$      C-exciton      A-exciton      exciton dynamics      transient absorption spectroscopy  
Received:  23 June 2025      Revised:  21 July 2025      Accepted manuscript online:  31 July 2025
PACS:  71.35.-y (Excitons and related phenomena)  
  71.35.Cc (Intrinsic properties of excitons; optical absorption spectra)  
  78.47.-p (Spectroscopy of solid state dynamics)  
  78.47.jb (Transient absorption)  
  78.55.-m (Photoluminescence, properties and materials)  
Fund: This work was supported by the National Natural Science Foundation of China (Grant Nos. 12474421 and 12104066), the Fund from Education Department of Jilin Province (Grant Nos. JJKH20250473KJ and JJKH20241413KJ), and the Fund from Department of Science and Technology of Jilin Province (Grant No. YDZJ202101ZYTS041).
Corresponding Authors:  Yuanzheng Li     E-mail:  liyz264@nenu.edu.cn

Cite this article: 

Hang Ren(任航), Shuai Zhu(朱帅), Mingzhao Ouyang(欧阳名钊), Jiake Wang(王加科), Yuegang Fu(付跃刚), Chuxin Yan(闫楚欣), Qingbin Wang(王庆彬), and Yuanzheng Li(李远征) Probing high-energy and band-edge exciton dynamics in monolayer WS2 using transient absorption spectroscopy under near-resonant and high-energy excitations 2025 Chin. Phys. B 34 097104

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