Performance enhancement of IGZO thin-film transistors via ultra-thin HfO2 and the implementation of logic device functionality

doi:10.1088/1674-1056/adcb22

Abstract The enhancement of mobility has always been a research focus in the field of thin-film transistors (TFTs). In this paper, we report a method using ultra-thin HfO$_{2}$ to improve the electrical performance of indium gallium zinc oxide (IGZO) TFTs. HfO$_{2}$ not only repairs the surface morphology of the active layer, but also increases the carrier concentration. When the thickness of the HfO$_{2}$ film was 3 nm, the mobility of the device was doubled (14.9 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1} \to 29.6 $ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$), and the device exhibited excellent logic device performance. This paper provides a simple and effective method to enhance the electrical performance of IGZO TFTs, offering new ideas and experimental foundation for research into high-performance metal oxide (MO) TFTs.

Keywords: thin-film transistors metal oxide indium gallium zinc oxide (IGZO) logic devices TCAD simulation

Received: 28 February 2025
Revised: 25 March 2025
Accepted manuscript online: 10 April 2025

PACS:	61.43.Dq	(Amorphous semiconductors, metals, and alloys)
	61.82.Fk	(Semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 62441407), the Natural Science Basic Research Program of Shaanxi (Grant No. 2024JCYBQN- 0631), the Natural Science Foundation of Shaanxi Provincial Department of Education (Grant No. 23JK0482), and the Shaanxi Province Key R & D Program General Project - Industrial Field (Grant No. 2024GX-YBXM-085).

Corresponding Authors: Xuyang Li, Zhinong Yu
E-mail: lixuyang@xatu.edu.cn;znyu@bit.edu.cn

Cite this article:

Xuyang Li(栗旭阳), Bin Liu(刘斌), Xianwen Liu(刘贤文), Shuo Zhang(张硕), Congyang Wen(温丛阳), Jin Zhang(张进), Haifeng Liang(梁海锋), Guangcai Yuan(袁广才), Jianshe Xue(薛建设), and Zhinong Yu(喻志农) Performance enhancement of IGZO thin-film transistors via ultra-thin HfO₂ and the implementation of logic device functionality 2025 Chin. Phys. B 34 076101

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Performance enhancement of IGZO thin-film transistors via ultra-thin HfO2 and the implementation of logic device functionality

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Performance enhancement of IGZO thin-film transistors via ultra-thin HfO₂ and the implementation of logic device functionality