Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

doi:10.1088/1674-1056/acbde7

Abstract The synergistic effect of total ionizing dose (TID) and single event gate rupture (SEGR) in SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.

Keywords: SiC power MOSFET total ionizing dose (TID) single event gate rupture (SEGR) synergistic effect TCAD simulation

Received: 23 October 2022
Revised: 04 January 2023
Accepted manuscript online: 22 February 2023

PACS:	85.30.Tv	(Field effect devices)
	61.80.Az	(Theory and models of radiation effects)
	61.80.Jh	(Ion radiation effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 12004329), Open Project of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No. SKLIPR2115), Postgraduate Research and Practice Innovation Program of Jiangsu Province (Grant No. SJCX22 1704), and Innovative Science and Technology Platform Project of Cooperation between Yangzhou City and Yangzhou University, China (Grant Nos. YZ202026301 and YZ202026306).

Corresponding Authors: Rongxing Cao, Yuxiong Xue
E-mail: rxcao@yzu.edu.cn;yxxue@yzu.edu.cn

Cite this article:

Rongxing Cao(曹荣幸), Kejia Wang(汪柯佳), Yang Meng(孟洋), Linhuan Li(李林欢), Lin Zhao(赵琳), Dan Han(韩丹), Yang Liu(刘洋), Shu Zheng(郑澍), Hongxia Li(李红霞), Yuqi Jiang(蒋煜琪), Xianghua Zeng(曾祥华), and Yuxiong Xue(薛玉雄) Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs 2023 Chin. Phys. B 32 068502

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Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

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