Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50% Al composition
Siqi Li(李思琦)1, Pengfei Shao(邵鹏飞)1, Xiao Liang(梁潇)1, Songlin Chen(陈松林)1, Zhenhua Li(李振华)1,2, Xujun Su(苏旭军)3, Tao Tao(陶涛)1, Zili Xie(谢自力)1, Bin Liu(刘斌)1, M. Ajmal Khan4, Li Wang4, T. T. Lin4, Hideki Hirayama4, Rong Zhang(张荣)1, and Ke Wang(王科)1,4,†
1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210000, China; 2 School of Opto-Electronic Engineering, Zaozhuang University, Zaozhuang 277160, China; 3 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215000, China; 4 RIKEN, Saitama, Japan
Abstract We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of (AlN)/(GaN) superlattices (SLs), where and represent the numbers of monolayers. Clear satellite peaks observed in XRD 2- scans and TEM images evidence the formation of clear periodicity and atomically sharp interfaces. For (AlN)/(GaN) SLs with an average Al composition of 50%, we have obtained an electron density up to 4.48 cm and a resistivity of 0.002 cm, and a hole density of 1.83 cm with a resistivity of 3.722 cm, both at room temperature. Furthermore, the (AlN)/(GaN) SLs exhibit a blue shift for their photoluminescence peaks, from 403 nm to 318 nm as GaN is reduced from to MLs, reaching the challenging UVB wavelength range. The results demonstrate that the (AlN)/(GaN) SLs have the potential to enhance the conductivity and avoid the usual random alloy scattering of the high-Al-composition ternary AlGaN, making them promising functional components in both UVB emitter and AlGaN channel high electron mobility transistor applications.
(Effects of crystal defects, doping and substitution)
Fund: Project supported by the National Key R&D Program of China (Grant No. 2022YFB3605600), the National Natural Science Foundation of China (Grant No. 61974065), the Key R&D Project of Jiangsu Province, China (Grant Nos. BE2020004-3 and BE2021026), Postdoctoral Fellowship Program of CPSF (Grant No. GZC20231098), the Jiangsu Special Professorship, Collaborative Innovation Center of Solid State Lighting and Energy-saving Electronics.
Corresponding Authors:
Ke Wang
E-mail: kewang@nju.edu.cn
Cite this article:
Siqi Li(李思琦), Pengfei Shao(邵鹏飞), Xiao Liang(梁潇), Songlin Chen(陈松林), Zhenhua Li(李振华), Xujun Su(苏旭军), Tao Tao(陶涛), Zili Xie(谢自力), Bin Liu(刘斌), M. Ajmal Khan, Li Wang, T. T. Lin, Hideki Hirayama, Rong Zhang(张荣), and Ke Wang(王科) Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50% Al composition 2024 Chin. Phys. B 33 126801
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Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties Zhen-Hua Li(李振华), Peng-Fei Shao(邵鹏飞), Gen-Jun Shi(施根俊), Yao-Zheng Wu(吴耀政), Zheng-Peng Wang(汪正鹏), Si-Qi Li(李思琦), Dong-Qi Zhang(张东祺), Tao Tao(陶涛), Qing-Jun Xu(徐庆君), Zi-Li Xie(谢自力), Jian-Dong Ye(叶建东), Dun-Jun Chen(陈敦军), Bin Liu(刘斌), Ke Wang(王科), You-Dou Zheng(郑有炓), and Rong Zhang(张荣). Chin. Phys. B, 2022, 31(1): 018102.
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