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A macro model of spin-transfer torque magnetic tunnel junction |
| Ming-Bo Chen(陈明博)1,2, Kun-Kun Li(李琨琨)2, Xiao-Lei Yang(杨晓蕾)2, Xue Peng(彭雪)2, Wang-Da Li(李旺达)2, En-Long Liu(刘恩隆)2, Hui-Zhen Wu(吴惠桢)1, and Shi-Kun He(何世坤)2,† |
1 School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310030, China;
2 Zhejiang HIKSTOR Technology Co., LTD., Hangzhou 311300, China |
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Abstract The precise compact modeling of magnetic devices is pivotal for the integrated design of spin-transfer torque magnetic tunnel junction (STT-MTJ) in conjunction with CMOS circuitry. This work presents a macro model for an STT-MTJ which is compatible with SPICE simulation platforms. The model accurately replicates the electrical performance of the MTJ, encompassing the resistance-voltage characteristics and the pulse-width-dependent state switching behavior, and is validated with various experimental data. Additionally, the impact of process variations, particularly those affecting the MTJ diameter and barrier thickness is investigated and summarized in a corner model. Monte Carlo simulations demonstrate that our adaptable and streamlined model can be efficiently incorporated into the design of integrated circuits.
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Received: 19 July 2024
Revised: 27 September 2024
Accepted manuscript online: 27 September 2024
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PACS:
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85.70.Ay
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(Magnetic device characterization, design, and modeling)
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85.75.Dd
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(Magnetic memory using magnetic tunnel junctions)
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| Fund: Project supported by the National Science and Technology Major Project of China (Grant No. 2020AAA0109003). |
Corresponding Authors:
Shi-Kun He
E-mail: he_shikun@hikstor.com
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Cite this article:
Ming-Bo Chen(陈明博), Kun-Kun Li(李琨琨), Xiao-Lei Yang(杨晓蕾), Xue Peng(彭雪), Wang-Da Li(李旺达), En-Long Liu(刘恩隆), Hui-Zhen Wu(吴惠桢), and Shi-Kun He(何世坤) A macro model of spin-transfer torque magnetic tunnel junction 2024 Chin. Phys. B 33 128502
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