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Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb2Te3-GeTe superlattices |
| Zhijiang Ye(叶之江)1, Zuanming Jin(金钻明)1,2,†, Yexin Jiang(蒋叶昕)1, Qi Lu(卢琦)3, Menghui Jia(贾梦辉)5, Dong Qian(钱冬)3,4, Xiamin Huang(黄夏敏)6,7, Zhou Li(李舟)6,7,8, Yan Peng(彭滟)1,2, and Yiming Zhu(朱亦鸣)1,2 |
1 Terahertz Technology Innovation Research Institute, Terahertz Spectrum and Imaging Technology Cooperative Innovation Center, Shanghai Key Laboratory of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, China;
2 Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 200092, China;
3 Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;
4 Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China;
5 State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China;
6 GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China;
7 Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China;
8 University of Chinese Academy of Sciences, Beijing 100039, China |
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Abstract Chalcogenide superlattices Sb$_{2}$Te$_{3}$-GeTe is a candidate for interfacial phase-change memory (iPCM) data storage devices. By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together, we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb$_{2}$Te$_{3}$-GeTe superlattices. Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric, shift and injection currents contribute to the THz generation in Sb$_{2}$Te$_{3}$-GeTe superlattices. By decreasing the thickness and increasing the number of GeTe and Sb$_{2}$Te$_{3}$ layer, the interlayer coupling can be enhanced, which significantly reduces the contribution from circular photo-galvanic effect (CPGE). A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of $\sim 1100 $ nm to $\sim 1400 $ nm further demonstrates a gapped state resulting from the interlayer coupling. These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.
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Received: 18 April 2024
Revised: 18 April 2024
Accepted manuscript online: 25 April 2024
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PACS:
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42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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73.21.Cd
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(Superlattices)
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78.47.+q
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87.15.ht
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(Ultrafast dynamics; charge transfer)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2023YFF0719200 and 2022YFA1404004), the National Natural Science Foundation of China (Grant Nos. 62322115, 61988102, 61975110, 62335012, and 12074248), 111 Project (Grant No. D18014), the Key Project supported by Science and Technology Commission Shanghai Municipality (Grant No. YDZX20193100004960), Science and Technology Commission of Shanghai Municipality (Grant Nos. 22JC1400200 and 21S31907400), and General Administration of Customs People’s Republic of China (Grant No. 2019HK006). |
Corresponding Authors:
Zuanming Jin
E-mail: physics_jzm@usst.edu.cn
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Cite this article:
Zhijiang Ye(叶之江), Zuanming Jin(金钻明), Yexin Jiang(蒋叶昕), Qi Lu(卢琦), Menghui Jia(贾梦辉), Dong Qian(钱冬), Xiamin Huang(黄夏敏), Zhou Li(李舟), Yan Peng(彭滟), and Yiming Zhu(朱亦鸣) Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb2Te3-GeTe superlattices 2024 Chin. Phys. B 33 074210
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