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Multilevel optoelectronic hybrid memory based on N-doped Ge2Sb2Te5 film with low resistance drift and ultrafast speed |
| Ben Wu(吴奔)1,†, Tao Wei(魏涛)1,2,†,‡, Jing Hu(胡敬)1, Ruirui Wang(王瑞瑞)1, Qianqian Liu(刘倩倩)1, Miao Cheng(程淼)1, Wanfei Li(李宛飞)1, Yun Ling(凌云)1, and Bo Liu(刘波)1,2,§ |
1 Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China;
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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Abstract Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed, scalable and non-volatile characteristics. However, the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory. Here, N-doped Ge2Sb2Te5-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed. The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout. Results show that when N content is 27.4 at.%, N-doped Ge2Sb2Te5 film possesses high ten-year data retention temperature of 175 ℃ and low resistance drift coefficient of 0.00024 at 85 ℃, 0.00170 at 120 ℃, and 0.00249 at 150 ℃, respectively, owing to the formation of Ge-N, Sb-N, and Te-N bonds. The SET/RESET operation speeds of the film reach 520 ps/13 ps. In parallel, the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of magnitude. Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients. Therefore, the N-doped Ge2Sb2Te5 thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.
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Received: 28 April 2023
Revised: 25 June 2023
Accepted manuscript online: 14 July 2023
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PACS:
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85.60.-q
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(Optoelectronic devices)
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87.19.lv
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(Learning and memory)
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81.05.Gc
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(Amorphous semiconductors)
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42.70.-a
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(Optical materials)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 62205231 and 22002102), the Postgraduate Research & Practice Innovation Program of Jiangsu Province, China (Grant No. KYCX22 3271), and Jiangsu Key Laboratory for Environment Functional Materials. |
Corresponding Authors:
Tao Wei, Bo Liu
E-mail: weitao@usts.edu.cn;liubo@mail.usts.edu.cn
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Cite this article:
Ben Wu(吴奔), Tao Wei(魏涛), Jing Hu(胡敬), Ruirui Wang(王瑞瑞), Qianqian Liu(刘倩倩), Miao Cheng(程淼), Wanfei Li(李宛飞), Yun Ling(凌云), and Bo Liu(刘波) Multilevel optoelectronic hybrid memory based on N-doped Ge2Sb2Te5 film with low resistance drift and ultrafast speed 2023 Chin. Phys. B 32 108505
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