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Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage |
| Bo Liu(刘波)1,2,†, Tao Wei(魏涛)1,2, Jing Hu(胡敬)1, Wanfei Li(李宛飞)1, Yun Ling(凌云)1, Qianqian Liu(刘倩倩)1, Miao Cheng(程淼)1, and Zhitang Song(宋志棠)2 |
1 Research Center for Nanophotonic and Nanoelectronic Materials, School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China;
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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Abstract The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods, which constitute an insurmountable challenge for existing data centers. At present, computing devices use the von Neumann architecture with separate computing and memory units, which exposes the shortcomings of “memory bottleneck”. Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck. Phase-change random access memory (PCRAM) is called one of the best solutions for next generation non-volatile memory. Due to its high speed, good data retention, high density, low power consumption, PCRAM has the broad commercial prospects in the in-memory computing application. In this review, the research progress of phase-change materials and device structures for PCRAM, as well as the most critical performances for a universal memory, such as speed, capacity, and power consumption, are reviewed. By comparing the advantages and disadvantages of phase-change optical disk and PCRAM, a new concept of optoelectronic hybrid storage based on phase-change material is proposed. Furthermore, its feasibility to replace existing memory technologies as a universal memory is also discussed as well.
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Received: 22 January 2021
Revised: 26 February 2021
Accepted manuscript online: 16 March 2021
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PACS:
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85.60.-q
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(Optoelectronic devices)
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85.35.-p
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(Nanoelectronic devices)
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87.19.lv
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(Learning and memory)
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82.53.Mj
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(Femtosecond probing of semiconductor nanostructures)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 21773291, 61904118, and 22002102), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20190935 and BK20190947), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant Nos. 19KJA210005, 19KJB510012, 19KJB120005, and 19KJB430034), the Fund from the Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices (Grant No. SZS201812), the Science Fund from the Jiangsu Key Laboratory for Environment Functional Materials, the State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences. |
Corresponding Authors:
Bo Liu
E-mail: liubo@mail.usts.edu.cn
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Cite this article:
Bo Liu(刘波), Tao Wei(魏涛), Jing Hu(胡敬), Wanfei Li(李宛飞), Yun Ling(凌云), Qianqian Liu(刘倩倩), Miao Cheng(程淼), and Zhitang Song(宋志棠) Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage 2021 Chin. Phys. B 30 058504
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