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Transition-edge sensors using Mo/Au/Au tri-layer films |
| Hubing Wang(王沪兵)1,2,3, Yue Lv(吕越)1,2,3, Dongxue Li(李冬雪)1,2, Yue Zhao(赵越)1,2,3, Bo Gao(高波)1,2,3,†, and Zhen Wang(王镇)1,2,3 |
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2 CAS Center for Excellence in Superconducting Electronics(CENSE), Shanghai 200050, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract The proximity effect to reduce the transition temperature of a superconducting film is frequently used in transition-edge sensors. Here, we develop these transition-edge sensors using Mo/Au/Au tri-layer films to detect soft x-rays. They are equipped with an overhanging photon absorber. We reduce the fabrication complexity by integrating the sensor patterning with the tri-layer film formation. We determine the electro-thermal parameters of the sensors through a series of resistance vs. temperature and current vs. voltage measurements. We also demonstrate their energy-resolving capability by using a 55Fe radioactive x-ray source. The best energy resolution was approximately 6.66 eV at 5.9 keV, with a theoretical count rate of 500 Hz.
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Received: 03 May 2022
Revised: 24 June 2022
Accepted manuscript online: 08 July 2022
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PACS:
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85.25.Oj
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(Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge))
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| Fund: Project was supported by the National Key Research and Development Program of China (Grant No. 2017YFA0304000), the Shanghai Municipal Science and Technology Major Project (Grant No. 2017SHZDZX02), China National Space Administration (CNSA) (Grant No. D050104), and the grant for low energy gamma-ray detection research based on SQUID technique. |
Corresponding Authors:
Bo Gao
E-mail: bo_f_gao@mail.sim.ac.cn
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Cite this article:
Hubing Wang(王沪兵), Yue Lv(吕越), Dongxue Li(李冬雪), Yue Zhao(赵越), Bo Gao(高波), and Zhen Wang(王镇) Transition-edge sensors using Mo/Au/Au tri-layer films 2023 Chin. Phys. B 32 028501
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