Special Issue:
TOPICAL REVIEW — Topological insulator
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TOPICAL REVIEW—Topological insulator |
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Transport properties of topological insulators films and nanowires |
Liu Yi (刘易)a, Ma Zheng (马铮)a, Zhao Yan-Fei (赵弇斐)a, Meenakshi Singhb, Wang Jian (王健)a b |
a International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China;
b The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA |
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Abstract The last several years have witnessed the rapid developments in the study and understanding of topological insulators. In this review, after a brief summary of the history of topological insulators, we focus on the recent progress made in transport experiments on topological insulator films and nanowires. Some quantum phenomena, including the weak antilocalization, the Aharonov-Bohm effect, and the Shubnikov-de Haas oscillations, observed in these nanostructures are described. In addition, the electronic transport evidence of the superconducting proximity effect as well as an anomalous resistance enhancement in topological insulator/superconductor hybrid structures is included.
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Received: 19 May 2013
Accepted manuscript online:
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PACS:
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73.20.Fz
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(Weak or Anderson localization)
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73.25.+i
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(Surface conductivity and carrier phenomena)
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73.50.-h
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(Electronic transport phenomena in thin films)
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74.45.+c
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(Proximity effects; Andreev reflection; SN and SNS junctions)
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Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2013CB934600 and 2012CB921300), the National Natural Science Foundation of China (Grant Nos. 11222434 and 11174007), and the Pennsylvania State University Materials Research Science and Engineering Center under National Science Foundation (Grant No. DMR-0820404). |
Corresponding Authors:
Wang Jian
E-mail: jianwangphysics@pku.edu.cn
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Cite this article:
Liu Yi (刘易), Ma Zheng (马铮), Zhao Yan-Fei (赵弇斐), Meenakshi Singh, Wang Jian (王健) Transport properties of topological insulators films and nanowires 2013 Chin. Phys. B 22 067302
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