Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate

doi:10.1088/1674-1056/ab7d9c

Abstract We have successfully prepared GaN based high electron mobility transistors (HEMTs) on metallic substrates transferred from silicon substrates by electroplating technique. GaN HEMTs on Cu substrates are demonstrated to basically have the same good electric characteristics as the chips on Si substrates. Furthermore, the better heat dissipation of HEMTs on Cu substrates compared to HEMTs on Si substrates is clearly observed by thermoreflectance imaging, showing the promising potential for very high-power and high-temperature operation. This work shows the outstanding ability of HEMT chips on Cu substrates for solving the self-heating effect with the advantages of process simplicity, high yield, and low production requirement.

Keywords: GaN high electron mobility transistor (HEMT) electric characteristics electroplating heat dissipation

Received: 09 January 2020
Revised: 01 March 2020
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	81.15.Pq	(Electrodeposition, electroplating)
	44.15.+a	(Channel and internal heat flow)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61704008 and 11574362).

Corresponding Authors: Haiqiang Jia
E-mail: mbe2@iphy.ac.cn

Cite this article:

Minglong Zhao(赵明龙), Xiansheng Tang(唐先胜), Wenxue Huo(霍雯雪), Lili Han(韩丽丽), Zhen Deng(邓震), Yang Jiang(江洋), Wenxin Wang(王文新), Hong Chen(陈弘), Chunhua Du(杜春花), Haiqiang Jia(贾海强) Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate 2020 Chin. Phys. B 29 048104

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Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate

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