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GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model |
| Xin-Miao Zhu(朱鑫淼)1, Min Cui(崔敏)1,†, Yu Wang(汪宇)2, Tian-Jing Yu(于添景)1, Jin-Xiang Deng(邓金祥)1, and Hong-Li Gao(高红丽)1 |
1 Faculty of Science, Beijing University of Technology, Beijing 100124, China;
2 Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming 650500, China |
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Abstract Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, the thermal-electricity conversion performance governed by a GeSn diode has been systematically studied in its normal and inverted structures. For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping Nd(a) = 3 (7)×1018 cm-3 is observed, and the superior p+/n structure can achieve a higher performance. To reduce material consumption, an economical active layer can comprise a 100 nm-300 nm emitter and a 3 μm-6 μm base to attain comparable performance to that for the optimal configuration. Our results offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices.
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Received: 23 July 2021
Revised: 15 November 2021
Accepted manuscript online:
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PACS:
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88.40.fc
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(Modeling and analysis)
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84.60.Rb
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(Thermoelectric, electrogasdynamic and other direct energy conversion)
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02.60.-x
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(Numerical approximation and analysis)
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78.40.Fy
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(Semiconductors)
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| Fund: Project supported by the Beijing Natural Science Foundation Program,China (Grant No.4192016). |
Corresponding Authors:
Min Cui,E-mail:mcui@bjut.edu.cn
E-mail: mcui@bjut.edu.cn
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| About author: 2021-12-31 |
Cite this article:
Xin-Miao Zhu(朱鑫淼), Min Cui(崔敏), Yu Wang(汪宇), Tian-Jing Yu(于添景),Jin-Xiang Deng(邓金祥), and Hong-Li Gao(高红丽) GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model 2022 Chin. Phys. B 31 058801
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