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Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser |
Zhang Dong-Liang (张东亮), Cheng Bu-Wen (成步文), Xue Chun-Lai (薛春来), Zhang Xu (张旭), Cong Hui (丛慧), Liu Zhi (刘智), Zhang Guang-Ze (张广泽), Wang Qi-Ming (王启明) |
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract Optical gain characteristics of Ge1-xSnx are simulated systematically. With an injection carrier concentration of 5×1018/cm3 at room temperature, the maximal optical gain of Ge0.922Sn0.078 alloy (with n-type doping concentration being 5×1018/cm3) reaches 500 cm-1. Moreover, considering the free-carrier absorption effect, we find that there is an optimal injection carrier density to achieve a maximal net optical gain. A double heterostructure Ge0.554Si0.289Sn0.157/Ge0.922Sn0.078/Ge0.554Si0.289Sn0.157 short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density. The simulation values of the device threshold current density Jth are 6.47 kA/cm2 (temperature: 200 K, and λ =2050 nm), 10.75 kA/cm2 (temperature: 200 K, and λ =2000 nm), and 23.12 kA/cm2 (temperature: 300 K, and λ =2100 nm), respectively. The results indicate the possibility to obtain a Si-based short-wave infrared Ge1-xSnx laser.
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Received: 13 July 2014
Revised: 04 September 2014
Accepted manuscript online:
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PACS:
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42.55.Px
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(Semiconductor lasers; laser diodes)
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42.70.Hj
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(Laser materials)
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78.40.Fy
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(Semiconductors)
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95.85.Jq
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(Near infrared (0.75-3 μm))
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Fund: Project supported by the Major State Basic Research Development Program of China (Grant No. 2013CB632103), the National High-Technology Research and Development Program of China (Grant No. 2012AA012202), and the National Natural Science Foundation of China (Grant Nos. 61177038 and 61176013). |
Corresponding Authors:
Cheng Bu-Wen
E-mail: cbw@red.semi.ac.cn
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Cite this article:
Zhang Dong-Liang (张东亮), Cheng Bu-Wen (成步文), Xue Chun-Lai (薛春来), Zhang Xu (张旭), Cong Hui (丛慧), Liu Zhi (刘智), Zhang Guang-Ze (张广泽), Wang Qi-Ming (王启明) Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser 2015 Chin. Phys. B 24 024211
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