Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate

doi:10.1088/1674-1056/ab4d49

Abstract The InAs/AlSb heterostructures with step-graded GaAs_xSb_1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAs_xSb_1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAs_xSb_1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy (AFM), high resolution x-ray diffraction (HRXRD), reciprocal space map (RSM), and Hall measurements, the crystal quality and composition of GaAs_xSb_1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and V/III ratio constant. The results show that the highest electron mobility is 10270 cm²/V·s and the roughness is 4.3 nm for the step-graded GaAs_xSb_1-x metamorphic buffer layer grown at a temperature of 410℃.

Keywords: Si sticking coefficients growth temperature GaAs_xSb_1-x metamorphic buffer

Received: 04 June 2019
Revised: 20 September 2019
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
	81.70.-q	(Methods of materials testing and analysis)

Fund: Project supported by the National Defense Advanced Research Project, China (Grant No. 315 xxxxx301), the National Defense Innovation Program, China (Grant No. 48xx4), the National Key Technologies Research and Development Program, China (Grant No. 2018YFA0306101), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the National Natural Science Foundation of China (Grant No. 61505196).

Corresponding Authors: Hong-Liang Lv, Hai-Qiao Ni
E-mail: hllv@mail.xidian.edu.cn;nihq@semi.ac.cn

Cite this article:

Jing Zhang(张静), Hong-Liang Lv(吕红亮), Hai-Qiao Ni(倪海桥), Shi-Zheng Yang(杨施政), Xiao-Ran Cui(崔晓然), Zhi-Chuan Niu(牛智川), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) Effect of growth temperature of GaAs_xSb_1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate 2019 Chin. Phys. B 28 118102

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Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate

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Effect of growth temperature of GaAs_xSb_1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate