Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy

doi:10.1088/1674-1056/28/2/028101

Abstract The growth of the InAs film directly on the Si substrate deflected from the plane (100) at 4° towards (110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is 4640 cm²/V·in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320℃ followed by ramping up to 560℃, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520℃. The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm²/V·at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420℃.

Keywords: InAs Si high electron mobility growth temperature InGaAlAs metamorphic buffer

Received: 06 November 2018
Revised: 07 December 2018
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
	81.70.-q	(Methods of materials testing and analysis)

Fund: Project supported by the National Defense Advanced Research Project, China (Grant No. 315 xxxxx301), National Defense Innovation Program, China (Grant No. 48xx4), the National Key Technologies Research and Development Program of China (Grant No. 2018YFA03xxx01), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ2017xxx2), and the National Natural Science Foundation of China (Grant No. 6150xxx6).

Corresponding Authors: Hongliang Lv, Haiqiao Ni
E-mail: hllv@mail.xidian.edu.cn;nihq@semi.ac.cn

Cite this article:

Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Shizheng Yang(杨施政), Xiaoran Cui(崔晓然), Zhichuan Niu(牛智川), Yimen Zhang(张义门), Yuming Zhang(张玉明) Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 2019 Chin. Phys. B 28 028101

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Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy

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