1 School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China; 2 College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China; 3 Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract The growth of γ -In2Se3 thin films on mica by molecular beam epitaxy is studied. Single-crystalline γ -In2Se3 is achieved at a relatively low growth temperature. An ultrathin β -In2Se3 buffer layer is observed to nucleate and grow through a process of self-organization at initial deposition, which facilitates subsequent monolithic epitaxy of single-crystalline γ -In2Se3 at low temperature. Strong room-temperature photoluminescence and moderate optoelectronic response are observed in the achieved γ -In2Se3 thin films.
(Optoelectronic device characterization, design, and modeling)
Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2018YFA0306102 and 2018YFA0306703), the National Natural Science Foundation of China (Grant No. 61474014), the Sichuan Science and Technology Program, China (Grant No.2019YJ0202), and the University Program for Elaborate Courses of Postgraduates.
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