Homogeneous and inhomogeneous magnetic oxide semiconductors

doi:10.1088/1674-1056/ab38ac

Abstract

Magnetic oxide semiconductors are significant spintronics materials. In this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide semiconductors. In the homogeneous magnetic oxide semiconductors, we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping, and even un-doping to realize homogeneous substitution and the clear magnetic origin. And the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical properties. In the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed devices. And the related mechanisms are discussed in details. Finally, we provide an overview and possible potential applications of magnetic oxide semiconductors.

Keywords: magnetic oxide semiconductors ferromagnetism magnetoresistance

Received: 25 June 2019
Revised: 24 July 2019
Accepted manuscript online:

PACS:	85.75.-d	(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
	75.50.Pp	(Magnetic semiconductors)
	75.70.-i	(Magnetic properties of thin films, surfaces, and interfaces)

Fund:

Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0405703), the National Natural Science Foundation of China (Grant Nos. 61434002, 51571136, and 11274214), and the Special Funds of Sanjin Scholars Program, China.

Corresponding Authors: Xiao-Hong Xu
E-mail: xuxh@sxnu.edu.cn

Cite this article:

Xiao-Li Li(李小丽), Xiao-Hong Xu(许小红) Homogeneous and inhomogeneous magnetic oxide semiconductors 2019 Chin. Phys. B 28 098506

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[13]	Sign reversal of anisotropic magnetoresistance and anomalous thickness-dependent resistivity in Sr₂CrWO₆/SrTiO₃ films Chunli Yao(姚春丽), Tingna Shao(邵婷娜), Mingrui Liu(刘明睿), Zitao Zhang(张子涛), Weimin Jiang(姜伟民), Qiang Zhao(赵强), Yujie Qiao(乔宇杰), Meihui Chen(陈美慧), Xingyu Chen(陈星宇), Ruifen Dou(窦瑞芬), Changmin Xiong(熊昌民), and Jiacai Nie(聂家财). Chin. Phys. B, 2022, 31(10): 107302.
[14]	Observation of quadratic magnetoresistance in twisted double bilayer graphene Yanbang Chu(褚衍邦), Le Liu(刘乐), Yiru Ji(季怡汝), Jinpeng Tian(田金朋), Fanfan Wu(吴帆帆), Jian Tang(汤建), Yalong Yuan(袁亚龙), Yanchong Zhao(赵岩翀), Xiaozhou Zan(昝晓州), Rong Yang(杨蓉), Kenji Watanabe, Takashi Taniguchi, Dongxia Shi(时东霞), Wei Yang(杨威), and Guangyu Zhang(张广宇). Chin. Phys. B, 2022, 31(10): 107201.
[15]	Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement Runrun Hao(郝润润), Kun Zhang(张昆), Yinggang Li(李迎港), Qiang Cao(曹强), Xueying Zhang(张学莹), Dapeng Zhu(朱大鹏), and Weisheng Zhao(赵巍胜). Chin. Phys. B, 2022, 31(1): 017502.

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