Generation of Fabry-Pérot oscillations and Dirac state in two-dimensional topological insulators by gate voltage

doi:10.1088/1674-1056/26/5/057303

Abstract We investigate electron transport through HgTe ribbons embedded by strip-shape gate voltage through using a non-equilibrium Green function technique. The numerical calculations show that as the gate voltage is increased, an edge-related state in the valence band structure of the system shifts upwards, then hangs inside the band gap and merges into the conduction band finally. It is interesting that as the gate voltage is increased continuously, another edge-related state in the valence band also shifts upwards in the small-k region and contacts the previous one to form a Dirac cone in the band structure. Meanwhile in this process, the conductance spectrum displays as multiple resonance peaks characterized by some strong antiresonance valleys in the band gap, then behaves as Fabry-Pérot oscillations and finally develops into a nearly perfect quantum plateau with a value of 2e²/h. These results give a physical picture to understand the formation process of the Dirac state driven by the gate voltage and provide a route to achieving particular quantum oscillations of the electronic transport in nanodevices.

Keywords: Fabry-Pérot oscillations Diarc cone electronic transport HgTe quantum well

Received: 05 December 2016
Revised: 05 February 2017
Accepted manuscript online:

PACS:	73.63.Hs	(Quantum wells)
	73.23.-b	(Electronic transport in mesoscopic systems)
	73.20.At	(Surface states, band structure, electron density of states)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U1404108, 11104072, and 10947162) and Henan Foundation and Frontier Technology Research Program of China (Grant No. 162300410056).

Corresponding Authors: Bin Xu
E-mail: hnsqxb@163.com

Cite this article:

Bin Xu(徐斌), Rao Li(李饶), Hua-Hua Fu(傅华华) Generation of Fabry-Pérot oscillations and Dirac state in two-dimensional topological insulators by gate voltage 2017 Chin. Phys. B 26 057303

[1]	Kane C L and Mele E J 2005 Phys. Rev. Lett. 95 226801
[2]	Fu L, Kane C L and Mele E J 2007 Phys. Rev. Lett. 98 106803
[3]	Wu C J, Bernevig B A and Zhang S C 2006 Phys. Rev. Lett. 96 106401
[4]	Bernevig B A, Hughes T H and Zhang S C 2006 Science 314 1757
[5]	König M, Wiedmann S, Brüne C, Roth A, Buhmann H, Molenkamp L W, Qi X L and Zhang S C 2007 Science 318 766
[6]	Chang C, Zhang J, Feng X, Shen J, Zhang Z, Guo M, Li K, Ou Y, Wei P, Wang L, Ji Z, Feng Y, Ji S, Chen X, Jia J, Dai X, Fang Z, Zhang S C, He K, Wang Y, Ma X and Xue Q K 2013 Science 340 167
[7]	Chen J, Wang J and Sun Q F 2012 Phys. Rev. B 85 125401
[8]	Song J, Liu H, Jiang H, Sun Q F and Xie X C 2012 Phys. Rev. B 86 085437
[9]	Jiang H, Wang L, Sun Q F and Xie X C 2009 Phys. Rev. B 80 165316
[10]	Fu H H, Gao J H and Yao K L 2014 Nanotechnology 25 225201
[11]	Li J, Chu R L Jain J K and Shen S Q 2009 Phys. Rev. Lett. 102 136806
[12]	Liu C X, Qi X L, Dai X, Fang Z and Zhang S C 2008 Phys. Rev. Lett. 101 146802
[13]	Datta S 1995 Electronic Transport in Mesoscopic Systems (Cambridge: Cambridge University Press)
[14]	Chen J C, Wang J and Sun Q F 2012 Phys. Rev. B 85 125401
[15]	Xing Y, Sun Q F and Wang J 2006 Phys. Rev. B 73 205339
[16]	Fu H H, Yao K L and Liu Z L 2008 J. Chem. Phys. 129 134706
[17]	Fu H H, Yao K L and Liu Z L 2008 J. Phys. Chem. A 112 6205
[18]	Fu H H and Yao K L 2013 Europhys. Lett. 103 57011
[19]	Lee D H and Joannopoulos J D 1981 Phys. Rev. B 23 4997
[20]	Maciejko J, Liu C, Oreg Y, Qi X L, Wu C and Zhang S C 2009 Phys. Rev. Lett. 102 256803
[21]	Varlet A, Liu M H, Krueckl V, Bischoff D, Simonet P, Watanabe K, Taniguchi T, Richter K, Ensslin K and Ihn T 2014 Phys. Rev. Lett. 113 116601

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Generation of Fabry-Pérot oscillations and Dirac state in two-dimensional topological insulators by gate voltage

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