Studies on the nucleation of MBE grown III-nitride nanowires on Si

doi:10.1088/1674-1056/26/1/016103

Abstract GaN and AlN nanowires (NWs) have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy (MBE) are investigated. It is found that GaN NWs nucleated on in-situ formed Si₃N₄ fully release the stress upon the interface between GaN NW and amorphous Si₃N₄ layer, while AlN NWs nucleated by aluminization process gradually release the stress during growth. Depending on the strain status as well as the migration ability of III group adatoms, the different growth kinetics of GaN and AlN NWs result in different NW morphologies, i.e., GaN NWs with uniform radii and AlN NWs with tapered bases.

Keywords: GaN nanowires AlN nanowires strain nucleation

Received: 03 February 2016
Revised: 10 September 2016
Accepted manuscript online:

PACS:	61.46.Km	(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
	61.72.Hh	(Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))
	64.60.Q-	(Nucleation)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2013CB632804), the National Natural Science Foundation of China (Grant Nos. 61176015, 61176059, 61210014, 61321004, and 61307024), and the High Technology Research and Development Program of China (Grant No. 2012AA050601).

Corresponding Authors: Zhibiao Hao
E-mail: zbhao@tsinghua.edu.cn

Cite this article:

Yanxiong E(鄂炎雄), Zhibiao Hao(郝智彪), Jiadong Yu(余佳东), Chao Wu(吴超), Lai Wang(汪莱), Bing Xiong(熊兵), Jian Wang(王健), Yanjun Han(韩彦军), Changzheng Sun(孙长征), Yi Luo(罗毅) Studies on the nucleation of MBE grown III-nitride nanowires on Si 2017 Chin. Phys. B 26 016103

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Studies on the nucleation of MBE grown III-nitride nanowires on Si

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