High-speed waveguide-integrated Ge/Si avalanche photodetector

doi:10.1088/1674-1056/25/5/058503

Abstract Waveguide-integrated Ge/Si heterostructure avalanche photodetectors (APDs) were designed and fabricated using a CMOS-compatible process on 8-inch SOI substrate. The structure of the APD was designed as separate-absorption-charge-multiplication (SACM) using germanium and silicon as absorption region and multiplication region, respectively. The breakdown voltage (V_b) of such a device is 19 V at reverse bias and dark current appears to be 0.71 μA at 90% of the V_b. The device with a 10-μ length and 7-μ width of Ge layer shows a maximum 3-dB bandwidth of 17.8 GHz at the wavelength of 1550 nm. For the device with a 30-μ-length Ge region, gain-bandwidth product achieves 325 GHz.

Keywords: waveguide germanium photodetector

Received: 18 September 2015
Revised: 11 January 2016
Accepted manuscript online:

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	95.55.Aq	(Charge-coupled devices, image detectors, and IR detector arrays)

Fund: Project supported by the National State Basic Research Program of China (Grant No. 2013CB632103) and the National Natural Science Foundation of China (Grant Nos. 61177038, 61377045, and 61176013).

Corresponding Authors: Chunlai Xue
E-mail: clxue@semi.ac.cn

Cite this article:

Hui Cong(丛慧), Chunlai Xue(薛春来), Zhi Liu(刘智), Chuanbo Li(李传波), Buwen Cheng(步成文), Qiming Wang(王启明) High-speed waveguide-integrated Ge/Si avalanche photodetector 2016 Chin. Phys. B 25 058503

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High-speed waveguide-integrated Ge/Si avalanche photodetector

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