Influences of different structures on the characteristics of H2O-based and O3-based LaxAlyO films deposited by atomic layer deposition

doi:10.1088/1674-1056/25/5/058106

Abstract H₂O-based and O₃-based La_xAl_yO nanolaminate films were deposited on Si substrates by atomic layer deposition (ALD). Structures and performances of the films were changed by different barrier layers. The effects of different structures on the electrical characteristics and physical properties of the La_xAl_yO films were studied. Chemical bonds in the La_xAl_yO films grown with different structures and different oxidants were also investigated with x-ray photoelectron spectroscopy (XPS). The preliminary testing results indicate that the La_xAl_yO films with different structures and different oxidants show different characteristics, including dielectric constant, equivalent oxide thickness (EOT), electrical properties, and stability.

Keywords: atomic layer deposition oxidant dielectric constant equivalent oxide thickness

Received: 05 November 2015
Revised: 14 January 2016
Accepted manuscript online:

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	77.55.D-

Fund: Project supported supported by the National Natural Science Foundation of China (Grant Nos. 61376099 and 61434007).

Corresponding Authors: Hong-Xia Liu
E-mail: hxliu@mail.xidian.edu.cn

Cite this article:

Chen-Xi Fei(费晨曦), Hong-Xia Liu(刘红侠), Xing Wang(汪星), Dong-Dong Zhao(赵冬冬), Shu-Long Wang(王树龙), Shu-Peng Chen(陈树鹏) Influences of different structures on the characteristics of H₂O-based and O₃-based La_xAl_yO films deposited by atomic layer deposition 2016 Chin. Phys. B 25 058106

[1]	Cao D, Cheng X, Yu Y, Li X, Liu C, Shen D and Mändl S 2013 Appl. Phys. Lett. 103 081607
[2]	Zheng L, Cheng X, Cao D, Wang Z, Xia C, Yu Y and Shen D 2014 Appl. Phys. Lett. 104 023112
[3]	Flege J I, Kaemena B, Höcker J, Bertram F, Wollschläger J, Schmidt T and Falta J 2014 Appl. Phys. Lett. 104 131604
[4]	Zhang X, Liu B W, Zhao Y, Li C B and Xia Y 2013 Chin. Phys. B 22 127303
[5]	Park T J, Sivasubramani P, Coss B E, Kim H C, Lee B, Wallace R M, Kim J, Rousseau M, Liu X, Li H, Lehn J S, Hong D and Shenai D 2010 Appl. Phys. Lett. 97 092904
[6]	Fan J B, Liu H X, Gao B, Zhuo Q Q and Hao Y 2012 Chin. Phys. B 21 087702
[7]	Fan X J, Liu H X and Zhang X J 2013 Appl. Phys. A 114 545
[8]	Zhang X, Tu H, Zhao H, Yang M, Wang X, Xiong Y, Yang Z, Du J, Wang W and Chen D 2011 Appl. Phys. Lett. 99 132902
[9]	Park D W, Mikael S, Chang T H, Gong S and Ma Z 2015 Appl. Phys. Lett. 106 102106
[10]	Suzuki M, Yamaguchi T, Fukushima N and Koyama M 2008 J. Appl. Phys. 103 034118
[11]	Qiu H B, Li H Q, Liu B W, Zhang X and Shen Z N 2014 Chin. Phys. B 23 027301
[12]	Maeng W J, Kim W H and Kim H 2010 J. Appl. Phys. 107 074109
[13]	Kundu S, Maurya D, Clavel M, Zhou Y, Halder N N, Hudait M K, Banerji P and Priya S 2014 Sci. Rep. 5 8494
[14]	Liu W J, Liao M Y, Imura M, Oosato H, Watanabe E and Koide Y 2013 Appl. Phys. Lett. 102 112910
[15]	Molina J, Tachi K, Kakushima K, Ahmet P, Tsutsui K, Sugii N, Hattori T and Iwai H 2007 J. Electrochem. Soc. 154 G110
[16]	Suzuki M 2012 Materials 5 443
[17]	Lee B, Novak S R, Lichtenwalner D J, Yang X and Misra V 2011 IEEE Trans. Electron. Dev. 58 3106
[18]	Lamagna L, Wiemer C, Perego M, Volkos S N, Baldovino S, Tsoutsou D, Schamm-Chardon S, Coulon P E and Fanciulli M 2010 J. Appl. Phys. 108 084108
[19]	Li X L, Xiang W F, Lu H B and Ma Z H 2005 J. Appl. Phys. 97 124104
[20]	Cao D, Cheng X, Jia T, Xu D, Wang Z, Xia C, Yu Y and Shen D 2013 J. Vac. Sci. Technol. B. 31 01A113
[21]	Liu J W, Liao M Y, Imura M, Oosato H, Watanabe E, Tanaka A, Iwai H and Koide Y 2013 J. Appl. Phys. 114 084108
[22]	Das T, Mahata C, Maiti C K, Dalapati G K, Chia C K, Chi D Z, Chiam S Y, Seng H L, Tan C C, Hui H K, Sutradhar G and Bose P K 2012 J. Electrochem. Soc. 159 G15
[23]	Ma J W, Lee W J, Cho M H, Lee K M, Sohn H C, Kim C S and Cho H J 2011 J. Appl. Phys. 109 124106
[24]	Ma J W, Lee W J, Cho M H, Chung K B, An C H, Kim H, Cho Y J, Moon D W and Cho H J 2011 J. Electrochem. Soc. 158 G79

[1]	Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[2]	Designing high k dielectric films with LiPON—Al₂O₃ hybrid structure by atomic layer deposition Ze Feng(冯泽), Yitong Wang(王一同), Jilong Hao(郝继龙), Meiyi Jing(井美艺), Feng Lu(卢峰), Weihua Wang(王维华), Yahui Cheng(程雅慧), Shengkai Wang(王盛凯), Hui Liu(刘晖), and Hong Dong(董红). Chin. Phys. B, 2022, 31(5): 057701.
[3]	Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers Xiao-Bo He(何小波), Hua-Tian Hu(胡华天), Ji-Bo Tang(唐继博), Guo-Zhen Zhang(张国桢), Xue Chen(陈雪), Jun-Jun Shi(石俊俊), Zhen-Wei Ou(欧振伟), Zhi-Feng Shi(史志锋), Shun-Ping Zhang(张顺平), Chang Liu(刘昌), and Hong-Xing Xu(徐红星). Chin. Phys. B, 2022, 31(1): 017803.
[4]	Characterization and application in XRF of HfO₂-coated glass monocapillary based on atomic layer deposition Yan-Li Li(李艳丽), Ya-Bing Wang(王亚冰), Wei-Er Lu(卢维尔), Xiang-Dong Kong(孔祥东), Li Han(韩立), and Hui-Bin Zhao(赵慧斌). Chin. Phys. B, 2021, 30(5): 050703.
[5]	Relationship between ESIPT properties and antioxidant activities of 5-hydroxyflavone derivates Chaofan Sun(孙朝范), Bifa Cao(曹必发), Hang Yin(尹航), Ying Shi(石英). Chin. Phys. B, 2020, 29(5): 058202.
[6]	Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films Ailing Chang(常爱玲), Yichen Mao(毛亦琛), Zhiwei Huang(黄志伟), Haiyang Hong(洪海洋), Jianfang Xu(徐剑芳), Wei Huang(黄巍), Songyan Chen(陈松岩), Cheng Li(李成). Chin. Phys. B, 2020, 29(3): 038102.
[7]	Surface termination effects on the electrical characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition Ji-Bin Fan(樊继斌), Shan-Ya Ling(凌山雅), Hong-Xia Liu(刘红侠), Li Duan(段理), Yan Zhang(张研), Ting-Ting Guo(郭婷婷), Xing Wei(魏星), and Qing He(何清)$. Chin. Phys. B, 2020, 29(11): 117701.
[8]	Microwave-assisted synthesis of Mg:PbI₂ nanostructures and their structural, morphological, optical, dielectric and electrical properties for optoelectronic technology Mohd. Shkir, Ziaul Raza Khan, T Alshahrani, Kamlesh V. Chandekar, M Aslam Manthrammel, Ashwani Kumar, and S AlFaify$. Chin. Phys. B, 2020, 29(11): 116102.
[9]	Effect of source temperature on phase and metal–insulator transition temperature of vanadium oxide films grown by atomic layer deposition Bingheng Meng(孟兵恒), Dengkui Wang(王登魁)†, Deshuang Guo(郭德双), Juncheng Liu(刘俊成), Xuan Fang(方铉), Jilong Tang(唐吉龙), Fengyuan Lin(林逢源), Xinwei Wang(王新伟), Dan Fang(房丹), and Zhipeng Wei(魏志鹏)‡. Chin. Phys. B, 2020, 29(10): 107102.
[10]	Theoretical estimation of sonochemical yield in bubble cluster in acoustic field Zhuang-Zhi Shen(沈壮志). Chin. Phys. B, 2020, 29(1): 014304.
[11]	Enhanced dielectric and optical properties of nanoscale barium hexaferrites for optoelectronics and high frequency application J Mohammed, A B Suleiman, Tchouank Tekou Carol T, H Y Hafeez, Jyoti Sharma, Pradip K Maji, Sachin Godara Kumar, A K Srivastava. Chin. Phys. B, 2018, 27(12): 128104.
[12]	Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide Cai-Xia Hou(侯彩霞), Xin-He Zheng(郑新和), Rui Jia(贾锐), Ke Tao(陶科), San-Jie Liu(刘三姐), Shuai Jiang(姜帅), Peng-Fei Zhang(张鹏飞), Heng-Chao Sun(孙恒超), Yong-Tao Li(李永涛). Chin. Phys. B, 2017, 26(9): 098103.
[13]	Influences of different oxidants on characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition Ji-Bin Fan(樊继斌), Hong-Xia Liu(刘红侠), Li Duan(段理), Yan Zhang(张研), Xiao-Chen Yu(于晓晨). Chin. Phys. B, 2017, 26(6): 067701.
[14]	Performance and reliability improvement of La₂O₃/Al₂O₃ nanolaminates using ultraviolet ozone post treatment Ji-Bin Fan(樊继斌), Hong-Xia Liu(刘红侠), Bin Sun(孙斌), Li Duan(段理), Xiao-Chen Yu(于晓晨). Chin. Phys. B, 2017, 26(5): 057702.
[15]	Effective dielectric constant model of electromagnetic backscattering from stratified air-sea surface film-sea water medium Tao Xie(谢涛), William Perrie, He Fang(方贺), Li Zhao(赵立), Wen-Jin Yu(于文金), Yi-Jun He(何宜军). Chin. Phys. B, 2017, 26(5): 054102.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Influences of different structures on the characteristics of H2O-based and O3-based LaxAlyO films deposited by atomic layer deposition

Cite this article:

Online attention

Influences of different structures on the characteristics of H₂O-based and O₃-based La_xAl_yO films deposited by atomic layer deposition