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Chin. Phys. B, 2016, Vol. 25(2): 024204    DOI: 10.1088/1674-1056/25/2/024204
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

Cheng-Ao Yang(杨成奥)1,2, Yu Zhang(张宇)1,2, Yong-Ping Liao(廖永平)1,2, Jun-Liang Xing(邢军亮)1,2, Si-Hang Wei(魏思航)1,2, Li-Chun Zhang(张立春)1,2, Ying-Qiang Xu(徐应强)1,2, Hai-Qiao Ni(倪海桥)1,2, Zhi-Chuan Niu(牛智川)1,2
1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
Abstract  We report a type-I GaSb-based laterally coupled distributed-feedback (LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20 ℃ with side mode suppression ratio (SMSR) as high as 24 dB. The maximum single mode continuous-wave output power is about 10 mW at room temperature (uncoated facet). A low threshold current density of 230 A/cm2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.
Keywords:  laterally coupled distributed feedback laser      LC-DFB      interference lithography      GaSb      second-order Bragg grating  
Received:  05 July 2015      Revised:  10 September 2015      Accepted manuscript online: 
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  78.55.Cr (III-V semiconductors)  
  78.67.De (Quantum wells)  
  42.60.Pk (Continuous operation)  
Fund: Project supported by the National Key Basic Research Program of China (Grant Nos. 2014CB643903 and 2013CB932904), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), the National Natural Science Foundation of China (Grant Nos. 61435012, 61274013, 61306088, and 61290303), and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB01010200).
Corresponding Authors:  Zhi-Chuan Niu     E-mail:  zcniu@semi.ac.cn

Cite this article: 

Cheng-Ao Yang(杨成奥), Yu Zhang(张宇), Yong-Ping Liao(廖永平), Jun-Liang Xing(邢军亮), Si-Hang Wei(魏思航), Li-Chun Zhang(张立春), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川) 2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography 2016 Chin. Phys. B 25 024204

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