Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm

doi:10.1088/1674-1056/27/12/124207

Abstract

We report a type-Ⅱ GaSb-based interband cascade laser operating a continuous wave at room temperature. The cascade region of interband cascade laser was designed using the ‘W’ configuration of the active quantum wells and the ‘Carrier Rebalancing’ method in the electron injector. The devices were processed into narrow ridges and mounted epitaxial side down on a copper heat sink. The 25-μm-wide, 3-mm-long ridge without coated facets generated 41.4 mW of continuous wave output power at T=15℃. And a low threshold current density of 267 A/cm² is achieved. The emission wavelength of the ICL is 3452.3 nm at 0.5 A.

Keywords: interband cascade laser mid-infrared GaSb-based type-Ⅱ W quantum well

Received: 14 August 2018
Revised: 01 September 2018
Accepted manuscript online:

PACS:	42.55.Px	(Semiconductor lasers; laser diodes)
	78.55.Cr	(III-V semiconductors)
	78.67.Pt	(Multilayers; superlattices; photonic structures; metamaterials)
	42.60.Pk	(Continuous operation)

Fund:

Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 61790580), the National Natural Science Foundation of China (Grant No. 61435012), and the National Basic Research Program of China (Grant No. 2014CB643903).

Corresponding Authors: Yu Zhang, Zhi-Chuan Niu
E-mail: zhangyu@semi.ac.cn;zcniu@semi.ac.cn

Cite this article:

Yi Zhang(张一), Fu-Hui Shao(邵福会), Cheng-Ao Yang(杨成奥), Sheng-Wen Xie(谢圣文), Shu-Shan Huang(黄书山), Ye Yuan(袁野), Jin-Ming Shang(尚金铭), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川) Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm 2018 Chin. Phys. B 27 124207

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Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm

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