| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Strain-induced magnetism in ReS2 monolayer with defects |
| Xiao-Ou Zhang(张小欧)1, Qing-Fang Li(李庆芳)2 |
1 Department of Electrical Engineering and Photoelectric Technology, Zijin College of Nanjing University of Science and Technology, Nanjing 210023, China;
2 Department of Physics, Nanjing University of Information Science & Technology, Nanjing 210044, China |
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Abstract We investigate the effects of strain on the electronic and magnetic properties of ReS2 monolayer with sulfur vacancies using density functional theory. Unstrained ReS2 monolayer with monosulfur vacancy (VS) and disulfur vacancy (V2S) both are nonmagnetic. However, as strain increases to 8%, VS-doped ReS2 monolayer appears a magnetic half-metal behavior with zero total magnetic moment. In particular, for V2S-doped ReS2 monolayer, the system becomes a magnetic semiconductor under 6% strain, in which Re atoms at vicinity of vacancy couple anti-ferromagnetically with each other, and continues to show a ferromagnetic metal characteristic with total magnetic moment of 1.60μ B under 7% strain. Our results imply that the strain-manipulated ReS2 monolayer with VS and V2S can be a possible candidate for new spintronic applications.
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Received: 21 April 2016
Revised: 02 June 2016
Accepted manuscript online:
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PACS:
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71.15.Mb
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(Density functional theory, local density approximation, gradient and other corrections)
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73.20.At
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(Surface states, band structure, electron density of states)
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75.50.Pp
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(Magnetic semiconductors)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11547030). |
Corresponding Authors:
Qing-Fang Li
E-mail: qingfangli@nuist.edu.cn
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Cite this article:
Xiao-Ou Zhang(张小欧), Qing-Fang Li(李庆芳) Strain-induced magnetism in ReS2 monolayer with defects 2016 Chin. Phys. B 25 117103
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