Modified model of gate leakage currents in AlGaN/GaN HEMTs

doi:10.1088/1674-1056/25/10/107106

Abstract It has been reported that the gate leakage currents are described by Frenkel-Poole emission (FPE) model, at the temperatures higher than 250 K. However, the gate leakage currents of our passivated devices do not accord with the FPE model. Therefore, a modified FPE model is developed in which an additional leakage current, besides the gate (I_II), is added. Based on the samples with different passivations, the I_II caused by a large number of surface traps is separated from total gate currents, and is found to be linear with respect to (φ_B-V_g)^0.5. Compared with these from the FPE model, the calculated results from the modified model agree well with the I_g-V_g measurements at temperatures ranging from 295 K to 475 K.

Keywords: gate leakage currents FPE model additional leakage current surface traps

Received: 12 April 2016
Revised: 23 May 2016
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	72.20.Fr	(Low-field transport and mobility; piezoresistance)
	72.10.-d	(Theory of electronic transport; scattering mechanisms)
	77.22.Ej	(Polarization and depolarization)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61306113).

Corresponding Authors: Zhi-Hong Feng, Yuan-Jie Lv
E-mail: ga917vv@163.com;yuanjielv@163.com

Cite this article:

Yuan-Gang Wang(王元刚), Zhi-Hong Feng(冯志红), Yuan-Jie Lv(吕元杰), Xin Tan(谭鑫), Shao-Bo Dun(敦少博), Yu-Long Fang(房玉龙), Shu-Jun Cai(蔡树军) Modified model of gate leakage currents in AlGaN/GaN HEMTs 2016 Chin. Phys. B 25 107106

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Modified model of gate leakage currents in AlGaN/GaN HEMTs

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