Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells

doi:10.1088/1674-1056/27/1/017302

Abstract Three samples of GaAs/AlAs multiple-quantum wells with different quantum well widths and δ -doped with Be acceptors at the well center were grown on (100) GaAs substrates by molecular beam epitaxy. Polarized Raman spectra were recorded on the three samples at temperatures in a range of 4-50 K in a backscattering configuration. The two branches of coupled modes due to the interaction of the hole intersubband transitions and the quantum-well longitudinal optical (LO) phonon were observed clearly. The evaluation formalism of the Green function was employed and each lineshape of the Raman spectrum of the coupled modes was simulated. The dependence of the peak position of Raman shifts of the two coupled modes as well as the quantum-well LO phonon on the quantum-well size and measured temperature were given, and the coupling interaction mechanism between the hole subband transitions and the quantum-well LO phonon was researched.

Keywords: coupled mode Raman spectrum δ-doped GaAs/AlAs multiple quantum wells

Received: 18 August 2017
Revised: 07 October 2017
Accepted manuscript online:

PACS:	73.21.Fg	(Quantum wells)
	63.20.kd	(Phonon-electron interactions)
	71.55.Eq	(III-V semiconductors)

Fund: Project supported by Shandong Province Natural Science Foundation, China (Grant No. ZR2017MF018) and the National Natural Science Foundation of China (Grant No. 61675223).

Corresponding Authors: Wei-Min Zheng, Bin Li
E-mail: wmzheng@sdu.edu.cn;binli@mail.sitp.ac.cn

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Wei-Min Zheng(郑卫民), Wei-Yan Cong(丛伟艳), Su-Mei Li(李素梅), Ai-Fang Wang(王爱芳), Bin Li(李斌), Hai-Bei Huang(黄海北) Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells 2018 Chin. Phys. B 27 017302

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Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells

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