CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Tight-binding electron-phonon coupling and band renormalization in graphene |
Zhang De-Sheng (张德生)a b, Kang Guang-Zhen (康广震)b, Li Jun (李俊)a b |
a National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China; b Department of Physics, Nanjing University, Nanjing 210093, China |
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Abstract The kink structure in the quasiparticle spectrum of electrons in graphene observed at 200 meV below the Fermi level by angle-resolved photoemission spectroscopy (ARPES) was claimed to be caused by a tight-binding electron-phonon (e-ph) coupling in the previous theoretical studies. However, we numerically find that the e-ph coupling effect in this approach is too weak to account for the ARPES data. The former agreement between this approach and the ARPES data is due to an enlargement of the coupling constant by almost four times.
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Received: 02 July 2014
Revised: 29 August 2014
Accepted manuscript online:
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PACS:
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73.22.Pr
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(Electronic structure of graphene)
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71.10.-w
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(Theories and models of many-electron systems)
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71.18.+y
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(Fermi surface: calculations and measurements; effective mass, g factor)
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71.38.-k
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(Polarons and electron-phonon interactions)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10574063, 11275097, 10935001, 11274166, and 11075075), the National Basic Research Program of China (Grant No. 2012CB921504), and the Research Fund for the Doctoral Program of Higher Education, China (Grant No. 2012009111002). |
Corresponding Authors:
Zhang De-Sheng
E-mail: zhangdesheng99@gmail.com
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Cite this article:
Zhang De-Sheng (张德生), Kang Guang-Zhen (康广震), Li Jun (李俊) Tight-binding electron-phonon coupling and band renormalization in graphene 2015 Chin. Phys. B 24 017301
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