CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Theory of phonon-modulated electron spin relaxation time based on the projection–reduction method |
Nam Lyong Kanga, Sang Don Choib |
a Department of Applied Nanoscience, Pusan National University, Miryang 627-706, Republic of Korea; b Department of Physics, Kyungpook National University, Daegu 702-701, Republic of Korea |
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Abstract This paper introduces a new method for a formula for electron spin relaxation time of a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling using the projection-reduction method. The phonon absorption and emission processes as well as the photon absorption and emission processes in all electron transition processes can be explained in an organized manner, and the result can be represented in a diagram that can provide intuition for the quantum dynamics of electrons in a solid. The temperature (T) dependence of electron spin relaxation times (T1) in silicon is T1∝ T-1.07 at low temperatures and T1∝ T-3.3 at high temperatures for acoustic deformation constant Pad=1.4× 107 eV and optical deformation constant Pod=4.0×1017 eV/m. This means that electrons are scattered by the acoustic deformation phonons at low temperatures and optical deformation phonons at high temperatures, respectively. The magnetic field (B) dependence of the relaxation times is T1∝ B-2.7 at 100 K and T1∝ B-2.3 at 150 K, which nearly agree with the result of Yafet, T1∝ B-3.0~ B-2.5.
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Received: 10 January 2014
Revised: 20 February 2014
Accepted manuscript online:
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PACS:
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71.70.Ej
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(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
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72.25.Rb
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(Spin relaxation and scattering)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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Corresponding Authors:
Nam Lyong Kang
E-mail: nlkang@pusan.ac.kr
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Cite this article:
Nam Lyong Kang, Sang Don Choi Theory of phonon-modulated electron spin relaxation time based on the projection–reduction method 2014 Chin. Phys. B 23 087102
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