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Chin. Phys. B, 2014, Vol. 23(8): 086501    DOI: 10.1088/1674-1056/23/8/086501

Influence of defects in SiC (0001) on epitaxial graphene

Guo Yu (郭钰), Guo Li-Wei (郭丽伟), Lu Wei (芦伟), Huang Jiao (黄郊), Jia Yu-Ping (贾玉萍), Sun Wei (孙伟), Li Zhi-Lin (李治林), Wang Yi-Fei (王逸非)
Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  Defects in silicon carbide (SiC) substrate are crucial to the properties of the epitaxial graphene (EG) grown on it. Here we report the effect of defects in SiC on the crystalline quality of EGs through comparative studies of the characteristics of the EGs grown on SiC (0001) substrates with different defect densities. It is found that EGs on high quality SiC possess regular steps on the surface of the SiC and there is no discernible D peak in its Raman spectrum. Conversely, the EG on the SiC with a high density of defects has a strong D peak, irregular stepped morphology and poor uniformity in graphene layer numbers. It is the defects in the SiC that are responsible for the irregular stepped morphology and lead to the small domain size in the EG.
Keywords:  graphene      silicon carbide      defect  
Received:  18 March 2014      Revised:  08 May 2014      Accepted manuscript online: 
PACS:  65.40.-b (Thermal properties of crystalline solids)  
  68.35.-p (Solid surfaces and solid-solid interfaces: structure and energetics)  
Fund: Project supported by the National Key Basic Research Program of China (Grant No. 2011CB932700), the Knowledge Innovation Project of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W22), and the National Natural Science Foundation of China (Grant Nos. 51272279 and 51072223).
Corresponding Authors:  Guo Li-Wei     E-mail:

Cite this article: 

Guo Yu (郭钰), Guo Li-Wei (郭丽伟), Lu Wei (芦伟), Huang Jiao (黄郊), Jia Yu-Ping (贾玉萍), Sun Wei (孙伟), Li Zhi-Lin (李治林), Wang Yi-Fei (王逸非) Influence of defects in SiC (0001) on epitaxial graphene 2014 Chin. Phys. B 23 086501

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