Degradation of ferroelectric and weak ferromagnetic properties of BiFeO3 films due to the diffusion of silicon atoms

doi:10.1088/1674-1056/23/7/077504

Abstract Crystalline BiFeO₃ (BFO) films each with a crystal structure of a distorted rhombohedral perovskite are characterized by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM). The diffusion of silicon atoms from the substrate into the BiFeO₃ film is detected by Rutherford backscattering spectrometry (RBS). The element analysis is performed by energy dispersive X-ray spectroscopy (EDS). Simulation results of RBS spectrum show a visualized distribution of silicon. X-ray photoelectron spectroscopy (XPS) indicates that a portion of silica is formed in the diffusion process of silicon atoms. Ferroelectric and weak ferromagnetic properties of the BFO films are degraded due to the diffusion of silicon atoms. The saturation magnetization decreases from 6.11 down to 0.75 emu/g, and the leakage current density increases from 3.8 × 10^-4 up to 7.1 × 10^-4 A/cm^-2.

Keywords: ferroelectric ferromagnetic diffusion silicon

Received: 02 December 2013
Revised: 31 December 2013
Accepted manuscript online:

PACS:	75.50.Gg	(Ferrimagnetics)
	77.80.-e	(Ferroelectricity and antiferroelectricity)
	68.35.Fx	(Diffusion; interface formation)
	82.80.Yc	(Rutherford backscattering (RBS), and other methods ofchemical analysis)

Fund: Project supported by the International Cooperation Program of the Ministry of Science and Technology of China (Grant No. 2011DFR50580) and the National Natural Science Foundation of China (Grant Nos. 11105100, 11205116, and 11350110206).

Corresponding Authors: Huang Zhi-Hong, Fu De-Jun
E-mail: hzh19790109@126.com;djfu@whu.edu.cn

About author: 75.50.Gg; 77.80.-e; 68.35.Fx; 82.80.Yc

Cite this article:

Xiao Ren-Zheng (肖仁政), Zhang Zao-Di (张早娣), Vasiliy O. Pelenovich, Wang Ze-Song (王泽松), Zhang Rui (张瑞), Li Hui (李慧), Liu Yong (刘雍), Huang Zhi-Hong (黄志宏), Fu De-Jun (付德君) Degradation of ferroelectric and weak ferromagnetic properties of BiFeO₃ films due to the diffusion of silicon atoms 2014 Chin. Phys. B 23 077504

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Degradation of ferroelectric and weak ferromagnetic properties of BiFeO3 films due to the diffusion of silicon atoms

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Degradation of ferroelectric and weak ferromagnetic properties of BiFeO₃ films due to the diffusion of silicon atoms