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Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates |
| Wang Dang-Chao (王党朝)a, Zhang Yu-Ming (张玉明)b |
a School of Physics and Electronic Engineering, Xianyang Normal University, Xianyang 712000, China;
b School of Microelectronics, Xidian University, Key Laboratory of Wide Band-gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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Abstract We produced epitaxial graphene under a moderate pressure of 4 mbar (about 400 Pa) at temperature 1600 ℃. Raman spectroscopy and optical microscopy were used to confirm that epitaxial graphene has taken shape continually with slight thickness variations and regularly with a centimeter order of magnitude on 4H-SiC (0001) substrates. Then using X-ray photoelectron spectroscopy and Auger electron spectroscopy, we analyzed the chemical compositions and estimated the layer number of epitaxial graphene. Finally, an atomic force microscope and a scanning force microscope were used to characterize the morphological structure. Our results showed that under 4-mbar pressure, epitaxial graphene could be produced on a SiC substrate with a large area, uniform thickness but a limited morphological property. We hope our work will be of benefit to understanding the formation process of epitaxial graphene on SiC substrate in detail.
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Received: 10 February 2014
Revised: 04 March 2014
Accepted manuscript online:
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PACS:
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81.05.ue
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(Graphene)
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78.30.-j
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(Infrared and Raman spectra)
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61.48.Gh
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(Structure of graphene)
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| Fund: Project supported by the Key Specific Projects in the National Science & Technology Program, China (Grant No. 2011ZX02707), the Key Research Foundation from the Ministry of Education of China (Grant No. JY10000925016), the Specialized Research Fund from Xianyang Normal University, China (Grant Nos. 13XSYK010 and 201302026). |
Corresponding Authors:
Wang Dang-Chao
E-mail: wangdangchao@yeah.net
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| About author: 81.05.ue; 78.30.-j; 61.48.Gh |
Cite this article:
Wang Dang-Chao (王党朝), Zhang Yu-Ming (张玉明) Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates 2014 Chin. Phys. B 23 076103
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