High performance oscillator with 2-mW output power at 300 GHz

doi:10.1088/1674-1056/23/5/057204

Abstract Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF (radio frequency) output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.

Keywords: InP transferred electron devices terahertz wave negative differential resistance

Received: 20 August 2013
Revised: 19 November 2013
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	73.40.Lg
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences (Grant No. 2A2011YYYJ-1123).

Corresponding Authors: Jia Rui
E-mail: jiarui@ime.ac.cn

About author: 72.80.Ey; 73.40.Lg; 73.61.Ey

Cite this article:

Wu De-Qi (武德起), Ding Wu-Chang (丁武昌), Yang Shan-Shan (杨姗姗), Jia Rui (贾锐), Jin Zhi (金智), Liu Xin-Yu (刘新宇) High performance oscillator with 2-mW output power at 300 GHz 2014 Chin. Phys. B 23 057204

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