Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography

doi:10.1088/1674-1056/23/2/028504

Abstract Wafer-scale SiO₂ photonic crystal (PhC) patterns (SiO₂ air-hole PhC, SiO₂-pillar PhC) on indium tin oxide (ITO) layer of GaN-based light-emitting diode (LED) are fabricated via novel nanospherical-lens lithography. Nanoscale polystyrene spheres are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for exposure using conventional lithography instrument. The light output power is enhanced by as great as 40.5% and 61% over those of as-grown LEDs, for SiO₂-hole PhC and SiO₂-pillar PhC LEDs, respectively. No degradation to LED electrical properties is found due to the fact that SiO₂ PhC structures are fabricated on ITO current spreading electrode. For SiO₂-pillar PhC LEDs, which have the largest light output power in all LEDs, no dry etching, which would introduce etching damage, was involved. Our method is demonstrated to be a simple, low cost, and high-yield technique for fabricating the PhC LEDs. Furthermore, the finite difference time domain simulation is also performed to further reveal the emission characteristics of LEDs with PhC structures.

Keywords: InGaN light-emitting diodes (LEDs) photonic crystal nanosphere lithography FDTD simulation

Received: 29 August 2013
Revised: 22 September 2013
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	42.70.Qs	(Photonic bandgap materials)
	81.16.Nd	(Micro- and nanolithography)
	83.10.Rs	(Computer simulation of molecular and particle dynamics)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CB301902).

Corresponding Authors: Wei Tong-Bo
E-mail: tbwei@semi.ac.cn

About author: 85.60.Jb; 42.70.Qs; 81.16.Nd; 83.10.Rs

Cite this article:

Wu Kui (吴奎), Wei Tong-Bo (魏同波), Lan Ding (蓝鼎), Zheng Hai-Yang (郑海洋), Wang Jun-Xi (王军喜), Luo Yi (罗毅), Li Jin-Min (李晋闽) Large-scale SiO₂ photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography 2014 Chin. Phys. B 23 028504

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Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography

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Large-scale SiO₂ photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography