Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
Lü Yuan-Jie (吕元杰)a, Feng Zhi-Hong (冯志红)a, Gu Guo-Dong (顾国栋)a, Dun Shao-Bo (敦少博)a, Yin Jia-Yun (尹甲运)a, Wang Yuan-Gang (王元刚)a, Xu Peng (徐鹏)a, Han Ting-Ting (韩婷婷)a, Song Xu-Bo (宋旭波)a, Cai Shu-Jun (蔡树军)a, Luan Chong-Biao (栾崇彪)b, Lin Zhao-Jun (林兆军)b
a National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China; b School of Physics, Shandong University, Jinan 250100, China
Abstract Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current–voltage and capacitance-voltage curves, the polarization sheet charge density and relative permittivity are analyzed and calculated by self-consistently solving Schrödinger’s and Poisson’s equations. It is found that the values of relative permittivity and polarization sheet charge density of AlN/GaN diode are both much smaller than the ones of AlGaN/GaN diode, and also much lower than the theoretical values. Moreover, by fitting the measured forward I–V curves, the extracted dislocations existing in the barrier layer of the AlN/GaN diode are found to be much more than those of the AlGaN/GaN diode. As a result, the conclusion can be made that compared with AlGaN/GaN diode the Schottky metal has an enhanced influence on the strain of the extremely thinner AlN barrier layer, which is attributed to the more dislocations.
About author: 71.55.Eq; 77.80.bn; 77.22.Ch; 73.30.+y
Cite this article:
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Wang Yuan-Gang (王元刚), Xu Peng (徐鹏), Han Ting-Ting (韩婷婷), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军), Luan Chong-Biao (栾崇彪), Lin Zhao-Jun (林兆军) Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes 2014 Chin. Phys. B 23 027102
[1]
Medjdoub F, Zegaoui M, Ducatteaux D, Rolland N and Rolland P A 2011 IEEE Electron Dev. Lett. 32 874
[2]
Chang C Y, Pearton S J, Lo C F, Ren F, Kravchenko I I, Dabiran A M, Wowchak A M, Cui B and Chow P P 2009 Appl. Phys. Lett. 94 263505
[3]
Cen L B, Shen B, Qin Z X and Zhang G Y 2009 Chin. Phys. B 18 3905
[4]
Shinohara K, Regan D, Corrion A, Brown D, Tang Y, Wong J, Candia G, Schmitz A, Fung H, Kim S and Micovic M 2012 IEDM Tech. Dig. 27.2.1
[5]
Lin Z J, Zhao J Z, Corrigan T D, Wang Z, You Z D, Wang Z G and Lu W 2008 J. Appl. Phys. 103 044503
[6]
Sarua A, Ji H F, Kuball M, Uren M J, Martin T, Nash K J, Hilton K P and Balmer R S 2006 Appl. Phys. Lett. 88 103502
[7]
Lü Y J, Lin Z J, Zhang Y, Meng L G, Cao Z F, Luan C B, Chen H and Wang Z G 2011 Chin. Phys. B 20 097106
[8]
Shi L, Feng S W, Guo C S, Zhu H and Wan N 2013 Chin. Phys. B 22 027201
[9]
Zhao Z J, Lin Z J, Corrigan T D, Wang Z, You Z D and Wang Z G 2007 Appl. Phys. Lett. 91 173507
[10]
Lü Y J, Lin Z J, Zhang Y, Meng L G, Cao Z F, Luan C B, Chen H and Wang Z G 2011 Chin. Phys. B 20 047105
[11]
Martin G, Botchkarev A, Rockett A and Morkoc H 1996 Appl. Phys. Lett. 68 2541
[12]
Ye P D, Yang B, Ng K K, Bude J, Wilk G D, Halder S and Hwang J C M 2005 Appl. Phys. Lett. 86 063501
[13]
Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A and Stutzmann M 2000 J. Appl. Phys. 87 334
[14]
Lü Y J, Lin Z J, Meng L G, Yu Y X, Luan C B, Cao Z F, Chen H, Sun B Q and Wang Z G 2011 Appl. Phys. Lett. 99 123504
[15]
Lü Y J, Lin Z J, Corrigan T D, Zhao J Z, Cao Z F, Wang Z G and Chen H 2011 J. Appl. Phys. 109 074512
[16]
Chen C H, Baier S M, Arch D K and Shur M S 1988 IEEE Trans. Electron Dev. 35 570
[17]
Arslan E, Altindal Ş, Ozçelik S and Ozbay E 2009 J. Appl. Phys. 105 023705
[18]
Donoval D, Barus M and Zdimal M 1991 Solid-State Electron. 34 1365
[19]
Cao Z F, Lin Z J, Lü Y J, Luan C B, Yu Y X, Chen H and Wang Z G 2012 Chin. Phys. B 21 017103
[20]
Lin Z J, Lu W, Lee J, Liu D M, Flynn J S and Brandes G R 2003 Appl. Phys. Lett. 82 4364
[21]
Flores F G P, Rivera C and Munoz E 2009 Appl. Phys. Lett. 95 203504
[1]
Strain compensated type II superlattices grown by molecular beam epitaxy Chao Ning(宁超), Tian Yu(于天), Rui-Xuan Sun(孙瑞轩), Shu-Man Liu(刘舒曼), Xiao-Ling Ye(叶小玲), Ning Zhuo(卓宁), Li-Jun Wang(王利军), Jun-Qi Liu(刘俊岐), Jin-Chuan Zhang(张锦川), Shen-Qiang Zhai(翟慎强), and Feng-Qi Liu(刘峰奇). Chin. Phys. B, 2023, 32(4): 046802.
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
