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Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation |
Zheng Qi-Wen (郑齐文)a b c, Yu Xue-Feng (余学峰)a b, Cui Jiang-Wei (崔江维)a b, Guo Qi (郭旗)a b, Ren Di-Yuan (任迪远)a b, Cong Zhong-Chao (丛忠超)a b c, Zhou Hang (周航)a b c |
a Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; b Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China; c University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract Pattern imprinting in deep sub-micron static random access memories (SRAMs) during total dose irradiation is investigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell's static noise margin (SNM) and the background data, and study the influence of irradiation on the probability density function of ΔSNM, which is the difference between two data sides' SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation (STI) oxide rather than from the gate oxide of the micron-device.
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Received: 12 February 2014
Revised: 07 April 2014
Accepted manuscript online:
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PACS:
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61.80.Ed
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(γ-ray effects)
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61.82.Fk
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(Semiconductors)
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85.30.Tv
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(Field effect devices)
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07.85.-m
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(X- and γ-ray instruments)
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Corresponding Authors:
Yu Xue-Feng
E-mail: yuxf@ms.xjb.ac.cn
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About author: 61.80.Ed; 61.82.Fk; 85.30.Tv; 07.85.-m |
Cite this article:
Zheng Qi-Wen (郑齐文), Yu Xue-Feng (余学峰), Cui Jiang-Wei (崔江维), Guo Qi (郭旗), Ren Di-Yuan (任迪远), Cong Zhong-Chao (丛忠超), Zhou Hang (周航) Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation 2014 Chin. Phys. B 23 106102
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| [1] | Vroubel M, Zhuang Y, Rejaei B and Burghartz J 2003 J. Magn. Magn. Mater. 258-259 167
|
|
| [10] | Marc G, Vincent G, Sylvain G, Martial M, Pierre M and Philippe P 2011 IEEE Trans. Nucl. Sci. 58 2807
|
|
| [2] | Chen X, Ma Y G and Ong C K 2008 J. Appl. Phys. 104 013921
|
|
| [3] | Ma Y G and Ong C K 2007 J. Phys. D: Appl. Phys. 40 3286
|
|
| [11] | Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V, Manghisoni M, Ratti F L and Ranieri A 2007 Nucl. Instrum. Methods Phys. Res. A 582 750
|
|
| [4] | Zhang L R, Lü H, Liu X, Bai J M and Wei F L 2012 Chin. Phys. B 21 037502
|
|
| [12] | Azeez J B, Xinghai T and James D M 2001 IEEE J. Solid-State Circuits 36 658
|
|
| [5] | Lu G D, Zhang H W and Tang X L 2010 Chin. Phys. Lett. 27 097501
|
|
| [13] | Peter A S, Frans P W and Klaassen D B 1998 IEEE Trans. Electron Dev. 45 1960
|
|
| [6] | Yao D S, Ge S H, Zhou X Y, Zhang B M and Zuo H P 2010 Chin. Phys. Lett. 27 067502
|
|
| [7] | Xie T, Zheng D S, Li X H, Ma Y G, Wei F L and Yang Z 2002 Chin. Phys. 11 725
|
|
| [14] | Armin W and Julien Z 2005 Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation Lecture Notes in Computer Science 3728 488
|
|
| [8] | Jin S, Zhu W, van Dover R B, Tiefel T H, Korenivski V and Chen L H 1997 Appl. Phys. Lett. 70 3161
|
|
| [15] | Ivan S E, Hugh J B and Michael L A 2005 IEEE Trans. Nucl. Sci. 52 2259
|
|
| [16] | Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X and Zou S C 2011 Nucl. Instrum. Methods Phys. Res. A 644 48
|
|
| [9] | Ng V, Chen F H and Adeyeye A O 2003 J. Magn. Magn. Mater. 260 53
|
|
| [17] | Liu Z L, Hu Z Y, Zhang Z G, Shao H, Chen M, Bi D W, Ning B X and Zou S H 2011 Microelectronics Reliability 51 1148
|
|
| [10] | Wang S X, Sun N X, Yamaguchi M and Yabukami S 2000 Nature 407 150
|
|
| [18] | Hu Z Y, Liu Z L, Shao H, Zhang Z G, Ning B X, Chen M, Bi D W and Zou S H 2011 Microelectron. J. 42 883
|
|
| [19] | Cui J W 2012 "Research on Radiation and Reliability Effects of Ultra Deep Sub-micron CMOS Device for Space Application" (Ph. D. Dissertation) (Beijing: University of Chinese Academy of Sciences) (in Chinese)
|
|
| [20] | Cui J W, Yu X F, Ren D Y and Lu J 2012 Acta Phys. Sin. 61 026102 (in Chinese)
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