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Chin. Phys. B, 2013, Vol. 22(3): 036103    DOI: 10.1088/1674-1056/22/3/036103

Radiation damage effects on power VDMOS devices with composite SiO2–Si3N4 films

Gao Bo (高博), Liu Gang (刘刚), Wang Li-Xin (王立新), Han Zheng-Sheng (韩郑生), Song Li-Mei (宋李梅), Zhang Yan-Fei (张彦飞), Teng Rui (腾瑞), Wu Hai-Zhou (吴海舟)
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract  Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor (VDMOS) devices with composite SiO2-–Si3N4 film gate are investigated. The relationships among the important electrical parameters of the samples with different thickness SiO2-–Si3N4 films, such as threshold voltage, breakdown voltage, and on-state resistance in accumulated dose, are discussed. The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose. However, the relationships between the threshold voltages of the samples and the accumulated dose are more complex, not only positive drift, but also negative drift. At the end of the total dose experiment, we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies. We find that the samples with appropriate thickness ratio SiO2-–Si3N4 films have a good radiation-hardening ability. This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-–Si3N4 films.
Keywords:  power VDMOS device      total dose effects      single event effects      composite SiO2–Si3N4 films  
Received:  06 May 2012      Revised:  14 November 2012      Accepted manuscript online: 
PACS:  61.82.Fk (Semiconductors)  
  61.80.Ed (γ-ray effects)  
  61.80.Jh (Ion radiation effects)  
  81.40.Wx (Radiation treatment)  
Corresponding Authors:  Gao Bo     E-mail:

Cite this article: 

Gao Bo (高博), Liu Gang (刘刚), Wang Li-Xin (王立新), Han Zheng-Sheng (韩郑生), Song Li-Mei (宋李梅), Zhang Yan-Fei (张彦飞), Teng Rui (腾瑞), Wu Hai-Zhou (吴海舟) Radiation damage effects on power VDMOS devices with composite SiO2–Si3N4 films 2013 Chin. Phys. B 22 036103

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