Numerical simulation of a triple-junction thin-film solar cell based on μc-Si1-xGex：H

doi:10.1088/1674-1056/22/9/098803

Abstract In this paper, a-Si:H/a-SiGe:H/μc-SiGe:H triple-junction solar cell structure is proposed. By the analyses of microelectronic and photonic structures (AMPS-1D) and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction (TRJ) model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si:H/a-SiGe:H/μc-SiGe:H triple cell with an initial efficiency of 12.09% (V_oc=2.03 V, FF=0.69, J_sc=8.63 mA/cm², area=1 cm²) is achieved in our laboratory.

Keywords: a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell simulation analyses of microelectronic and photonic structures (AMPS-1D)

Received: 01 December 2012
Revised: 26 February 2013
Accepted manuscript online:

PACS:	88.40.jp	(Multijunction solar cells)
	88.50.gj	(Modeling, design)
	71.15.Ap	(Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.))

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707), the Natural Science Foundation of Tianjin City, China (Grant No. 12JCQNJC01000), and the Fundamental Research Funds for the Central Universities of China (Grant No. 65012371).

Corresponding Authors: Zhang Jian-Jun
E-mail: jjzhang@nankai.edu.cn

Cite this article:

Huang Zhen-Hua (黄振华), Zhang Jian-Jun (张建军), Ni Jian (倪牮), Cao Yu (曹宇), Hu Zi-Yang (胡子阳), Li Chao (李超), Geng Xin-Hua (耿新华), Zhao Ying (赵颖) Numerical simulation of a triple-junction thin-film solar cell based on μc-Si_1-xGe_x：H 2013 Chin. Phys. B 22 098803

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Numerical simulation of a triple-junction thin-film solar cell based on μc-Si1-xGex：H

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Numerical simulation of a triple-junction thin-film solar cell based on μc-Si_1-xGe_x：H