Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films：Solar cell applications

doi:10.1088/1674-1056/22/9/098802

Abstract Cadmium sulphide (CdS) and cadmium telluride (CdTe) thin films are deposited by electron beam evaporation. Atomic force microscopy (AFM) reveals that the root mean square (RMS) roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42-2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300℃ show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained.

Keywords: cadmium sulphide cadmium telluride electron beam evaporation solar cell

Received: 03 November 2012
Revised: 21 March 2013
Accepted manuscript online:

PACS:

88.40.jm

(Thin film III-V and II-VI based solar cells)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61036001 and 60976001), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the National Basic Research Program of China (Grant No. 2013CB632101).

Corresponding Authors: Xu Ling
E-mail: xuling@nju.edu.cn; okxuling@gmail.com

Cite this article:

Fang Li (方力), Chen Jing (陈婧), Xu Ling (徐岭), Su Wei-Ning (苏为宁), Yu Yao (于瑶), Xu Jun (徐骏), Ma Zhong-Yuan (马忠元) Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films：Solar cell applications 2013 Chin. Phys. B 22 098802

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Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films：Solar cell applications

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