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Chin. Phys. B, 2013, Vol. 22(10): 107702    DOI: 10.1088/1674-1056/22/10/107702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Bipolar resistive switching in BiFe0.95Zn0.05O3 films

Yuan Xue-Yong (袁学勇)a, Luo Li-Rong (罗丽荣)b, Wu Di (吴迪)c, Xu Qing-Yu (徐庆宇)a
a Department of Physics, Southeast University, Nanjing 211189, and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China;
b School of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
c Department of Materials Science and Engineering, Nanjing University, Nanjing 210008, China
Abstract  Bipolar resistive switching is studied in BiFe0.95Zn0.05O3 films prepared by pulsed laser deposition on (001) SrTiO3 substrate, with LaNiO3 as the bottom electrode, and Pt as the top electrode. Multiple steps of resistance change are observed in the resistive switching process with a slow voltage sweep, indicating the formation/rupture of multiple conductive filaments. A resistive ratio of the high resistance state (HRS) to the low resistance state (LRS) of over three orders of magnitude is observed. Furthermore, the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS, and Ohmic in the LRS. Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure, and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.
Keywords:  multiferroics      resistive switching  
Received:  30 March 2013      Revised:  10 May 2013      Accepted manuscript online: 
PACS:  77.55.Nv (Multiferroic/magnetoelectric films)  
  72.20.Ht (High-field and nonlinear effects)  
  73.50.Fq (High-field and nonlinear effects)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51172044), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2011617), the National Key Project for Basic Research of China (Grant No. 2010CB923404), the 333 Project of Jiangsu Province, by NCET-09-0296, the Scientific Research Foundation for Returned Overseas Chinese Scholars, the State Education Ministry, and Southeast University (Grant No. Seujq201106).
Corresponding Authors:  Xu Qing-Yu     E-mail:  xuqingyu@seu.edu.cn

Cite this article: 

Yuan Xue-Yong (袁学勇), Luo Li-Rong (罗丽荣), Wu Di (吴迪), Xu Qing-Yu (徐庆宇) Bipolar resistive switching in BiFe0.95Zn0.05O3 films 2013 Chin. Phys. B 22 107702

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