The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

doi:10.1088/1674-1056/22/10/107303

Abstract Step-stress experiments are performed in this paper to investigate the degradation mechanism of an AlGaN/GaN high electron mobility transistor (HEMT). It is found that the stress current shows a recoverable decrease during each voltage step and there is a critical voltage beyond which the stress current starts to increase sharply in our experiments. We postulate that defects may be randomly induced within the AlGaN barrier by the high electric field during each voltage step. But once the critical voltage is reached, the trap concentration will increase sharply due to the inverse piezoelectric effect. A leakage path may be introduced by excessive defect, and this may result in the permanent degradation of the AlGaN/GaN HEMT.

Keywords: AlGaN/GaN HEMT reliability degradation mechanism inverse piezoelectric effect

Received: 12 March 2013
Revised: 04 April 2013
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	85.30.Tv	(Field effect devices)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the Program for New Century Excellent Talents in University (Grant No. NCET-12-0915).

Corresponding Authors: Ma Xiao-Hua
E-mail: xhma@xidian.edu.cn

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Chen Wei-Wei (陈伟伟), Ma Xiao-Hua (马晓华), Hou Bin (侯斌), Zhu Jie-Jie (祝杰杰), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress 2013 Chin. Phys. B 22 107303

[1]	Tipirneni N, Koudymov A, Adivarahan V, Yang J, Simin G and Asif Khan M 2006 IEEE Electron Dev. Lett. 27 716
[2]	Ibbetson J P, Fini P T, Ness K D, DenBaars S P, Speck J S and Mishra U K 2000 Appl. Phys. Lett. 77 250
[3]	Mishra U K, Shen L, Kazior T E and Wu Y F 2008 Proc. IEEE 96 287
[4]	Joh J and del Alamo J A 2008 IEEE Electron Dev. Lett. 29 287
[5]	Chang C Y, Douglas E A, Kim J, Lu L, Lo C F, Chu B H, Cheney D J, Gila B P, Ren F, Via G D, Cullen D A, Zhou L, Smith D J, Jang S and Pearton S J 2011 IEEE Trans. Dev. Mater. Reliab. 11 187
[6]	Mishra U K 2012 IEEE International Reliability Physics Symposium, IRPS 2012, April 15-19, 2012, Anaheim, CA, USA, p. 2C.1.1
[7]	Ma X H, Jiao Y, Ma P, He Q, Ma J G, Zhang K, Zhang H L, Zhang J C and Hao Y 2011 Chin. Phys. B 20 127305
[8]	Meneghini M, Stocco A, Bertin M, Marcon D, Chini A, Meneghesso G and Zanoni E 2012 Appl. Phys. Lett. 100 033505
[9]	Fu L H, Lu H, Chen D J, Zhang R, Zheng Y D, Wei K and Liu X Y 2012 Chin. Phys. B 21 108503
[10]	Shi L, Feng S W, Guo C S, Zhu H and Wan N 2013 Chin. Phys. B 22 027201
[11]	Miller E J, Yu E T, Waltereit P and Speck J S 2004 Appl. Phys. Lett. 84 535
[12]	Trew R J, Green D S and Shealy J B 2009 IEEE Microwave Mag. 10 116
[13]	Sudharsanan S and Karmalkar S 2010 J. Appl. Phys. 107 064501
[14]	Joh J, Xia L and del Alamo J A 2007 IEEE International Electron Devices Meeting, IEDM’07, December 10-12, 2007, Piscataway, NJ, USA, p. 385
[15]	Kong X, Wei K, Liu G G and Liu X Y 2012 Chin. Phys. B 21 128501
[16]	Xie G, Tang C, Wang Tao, Guo Q, Zhang B, Sheng K and Wai T N 2013 Chin. Phys. B 22 026103

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The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

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