Influence of Si doping on the structural and optical properties of InGaN epilayers

doi:10.1088/1674-1056/22/10/106803

Abstract Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction (HRXRD), photolumimescence (PL), scanning electron microscope (SEM), and atomic force microscopy (AFM). It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing the formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.

Keywords: Si doping InGaN V-shaped defect

Received: 08 January 2013
Revised: 11 April 2013
Accepted manuscript online:

PACS:	68.55.Jk
	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)
	78.60.Hk	(Cathodoluminescence, ionoluminescence)
	78.66.Fd	(III-V semiconductors)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant Nos. 2011AA03A112, 2011AA03A106, and 2013AA03A101), the National Natural Science Foundation of China (Grant Nos. 11204360, 61210014, and 61078046), the Science & Technology Innovation Program of Department of Education of Guangdong Province, China (Grant No. 2012CXZD0017), the Industry-Academia Research Union Special Fund of Guangdong Province, China (Grant No. 2012B091000169), and the Science & Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China (Grant No. 2012B090600038).

Corresponding Authors: Chen Hong, He Miao
E-mail: hchen@aphy.iphy.ac.cn;herofate@126.com

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Lu Ping-Yuan (卢平元), Ma Zi-Guang (马紫光), Su Shi-Chen (宿世臣), Zhang Li (张力), Chen Hong (陈弘), Jia Hai-Qiang (贾海强), Jiang Yang (江洋), Qian Wei-Ning (钱卫宁), Wang Geng (王耿), Lu Tai-Ping (卢太平), He Miao (何苗) Influence of Si doping on the structural and optical properties of InGaN epilayers 2013 Chin. Phys. B 22 106803

[1]	Nakamura S, Senoh M, Nagahama S, Lwasa N, Yamada T, Matsushita T, Kiyoku H and Sugimoto Y 1996 Jpn. J. Appl. Phys. 35 L74
[2]	Chichibu S, Azuhata T, Sota T and Nakamura S 1997 Appl. Phys. Lett. 70 2822
[3]	Mukai T, Yamada M and Nakamura S 1999 Jpn. J. Appl. Phys. 38 3976
[4]	Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 108504
[5]	Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 098503
[6]	Pei X J, Guo L W, Wang X H, Wang Y, Jia H Q, Chen H and Zhou J M 2009 Chin. Phys. Lett. 26 028101
[7]	Kanie H and Yoshimura T 2003 Phys. Status Solidi (c) 0 2729
[8]	Wang X H, Guo L W, Jia H Q, Xing Z G, Wang Y, Pei X J, Zhou J M and Chen H 2009 Appl. Phys. Lett. 94 111913
[9]	Kusakabe K, Hara T and Ohkawa K 2005 J. Appl. Phys. 97 04503
[10]	Ryu M Y, Yu Y J, Shin E J, Yu P W, Lee J I, Yu S K, Oh E S, Nam O H, Sone C S, Park Y J and Kim T I 2000 Solid State Commun. 116 675
[11]	Uchida K, Tang T, Goto S, Mishima T, Niwa A and Gotoh J 1999 Appl. Phys. Lett. 74 1153
[12]	Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705
[13]	Pereira S, Correia M R, Pereira E, O’Donnell K P, Alves E, Sequeira A D, Franco N, Watson I M and Deatcher C J 2002 Appl. Phys. Lett. 80 3913
[14]	Chen Y, Takeuchi T, Amano H, Akasaki I, Yamada N, Kaneko Y and Wang S Y 1998 Appl. Phys. Lett. 72 710
[15]	Norhrup J E and Romano L T 1999 Appl. Phys. Lett. 74 2319
[16]	Li D B, Liu Y H, Katsuno T, Nakao K, Nakamura K, Aoki M, Miyake H and Hiramatsu K 2006 Phys. Status Solidi (c) 3 1944
[17]	Li D B, Katsuno T, Nakao K, Aoki M, Miyake H and Hiramatsu K 2006 J. Crystal Growth 290 374

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Influence of Si doping on the structural and optical properties of InGaN epilayers

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