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Chin. Phys. B, 2021, Vol. 30(5): 058501    DOI: 10.1088/1674-1056/abd73f

Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate

Yuan-Hao He(何元浩), Wei Mao(毛维), Ming Du(杜鸣), Zi-Ling Peng(彭紫玲), Hai-Yong Wang(王海永), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  A novel vertical InN/InGaN heterojunction tunnel FET with hetero T-shaped gate as well as polarization-doped source and drain region (InN-Hetero-TG-TFET) is proposed and investigated by Silvaco-Atlas simulations for the first time. Compared with the conventional physical doping TFET devices, the proposed device can realize the P-type source and N-type drain region by means of the polarization effect near the top InN/InGaN and bottom InGaN/InN heterojunctions respectively, which could provide an effective solution of random dopant fluctuation (RDF) and the related problems about the high thermal budget and expensive annealing techniques due to ion-implantation physical doping. Besides, due to the hetero T-shaped gate, the improvement of the on-state performance can be achieved in the proposed device. The simulations of the device proposed here in this work show ION of 4.45×10-5 A/μm, ION/IOFF ratio of 1013, and SSavg of 7.5 mV/dec in InN-Hetero-TG-TFET, which are better than the counterparts of the device with a homo T-shaped gate (InN-Homo-TG-TFET) and our reported lateral polarization-induced InN-based TFET (PI-InN-TFET). These results can provide useful reference for further developing the TFETs without physical doping process in low power electronics applications.
Keywords:  InGaN TFET      hetero T-shaped gate      polarization-doped source and drain  
Received:  21 August 2020      Revised:  18 November 2020      Accepted manuscript online:  30 December 2020
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Tv (Field effect devices)  
  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
Fund: Project supported by the Key Research and Development Program of Shaanxi Province, China (Grant No. 2020ZDLGY03-05) and the National Natural Science Foundation of China (Grant No. 61574112).
Corresponding Authors:  Wei Mao     E-mail:

Cite this article: 

Yuan-Hao He(何元浩), Wei Mao(毛维), Ming Du(杜鸣), Zi-Ling Peng(彭紫玲), Hai-Yong Wang(王海永), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate 2021 Chin. Phys. B 30 058501

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