A MOVPE method for improving InGaN growth quality by pre-introducing TMIn

doi:10.1088/1674-1056/abb801

Abstract We propose a metal organic vapor phase epitaxy (MOVPE) method of pre-introducing TMIn during the growth of u-GaN to improve the subsequent growth of InGaN and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive InGaN growth rate. Further x-ray diffraction (XRD), photoluminescence (PL), and atomic force microscope (AFM) tests showed that the quality of InGaN is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when InGaN is grown, so as to improve the material quality.

Keywords: InGaN metal organic vapor phase epitaxy (MOVPE)

Received: 29 July 2020
Revised: 28 August 2020
Accepted manuscript online: 14 September 2020

PACS:	81.05.Ea	(III-V semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	78.70.Dm	(X-ray absorption spectra)
	78.55.-m	(Photoluminescence, properties and materials)

Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801) and the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, and 61574134).

Corresponding Authors: ^†Corresponding author. E-mail: dgzhao@red.semi.ac.cn

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Zi-Kun Cao(曹子坤), De-Gang Zhao(赵德刚), Jing Yang(杨静), Jian-Jun Zhu(朱建军), Feng Liang(梁锋), and Zong-Shun Liu(刘宗顺) A MOVPE method for improving InGaN growth quality by pre-introducing TMIn 2021 Chin. Phys. B 30 018103

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A MOVPE method for improving InGaN growth quality by pre-introducing TMIn

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