Zn/O ratio and oxygen chemical state of nanocrystalline ZnO films grown at different temperatures

doi:10.1088/1674-1056/21/3/038101

Abstract ZnO nanocrystalline films are prepared on Si substrates at different temperatures by using metal-organic chemical vapour deposition (MOCVD). It is observed that when the growth temperature is low, the stoichiometric ratio between Zn and O atoms has a large deviation from the ideal ratio of 1:1. The ZnO grains in the film have small sizes and are not well crystallized, resulting in a poor photoluminescence (PL) property. When the temperature is increased to an appropriate value, the Zn/O ratio becomes optimized, and most of Zn and O atoms are combined into Zn-O bonds. Then the film has good crystal quality and good PL property. If the temperature is fairly high, the interfacial mutual diffusion of atoms between the substrate and the epitaxial film appears, and the desorption process of the oxygen atoms is enhanced. However, it has no effect on the film property. The film still has the best crystal quality and PL property.

Keywords: ZnO film metal-organic chemical vapour deposition growth temperature Zn/O ratio

Received: 30 August 2011
Revised: 18 October 2011
Accepted manuscript online:

PACS:	81.05.Dz	(II-VI semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	68.55.-a	(Thin film structure and morphology)

Fund: Project supported by the Natural Science Foundation of Shaanxi Province, China (Grant No. 2011JQ6015) and the Natural Science Foundation of Shaanxi Provincial Educational Committee, China (Grant No. 09JK740).

Corresponding Authors: Fan Hai-Bo,hbfan@nwu.edu.cn
E-mail: hbfan@nwu.edu.cn

Cite this article:

Fan Hai-Bo(范海波), Zheng Xin-Liang(郑新亮), Wu Si-Cheng(吴思诚), Liu Zhi-Gang(刘志刚), and Yao He-Bao(姚合宝) Zn/O ratio and oxygen chemical state of nanocrystalline ZnO films grown at different temperatures 2012 Chin. Phys. B 21 038101

[1] Özg黵 ?, Alivov I, Teke A, Reshchikov M A, Govgan S, Avrutin V, Cho S J and Morkoc H 2005 J. Appl. Phys. 98 041301
[2] Jiao S J, Zhang Z Z, Lu Y M, Shen D Z, Yao B, Zhang J Y, Li B H, Zhao D X, Fan X W and Tang Z K 2006 Appl. Phys. Lett. 88 031911
[3] Allenic A, Guo W, Chen Y B, Katz M B, Zhao G Y, Che Y, Hu Z D, Liu B, Zhang S B and Pan X Q 2007 Adv. Mater. 19 3333
[4] Ye J D, Gu S L, Zhu S M, Liu W, Liu S M, Zhang R, Shi Y and Zheng Y D 2006 Appl. Phys. Lett. 88 182112
[5] Wang P, Chen N F and Yin Z G 2006 Appl. Phys. Lett. 88 152102
[6] Zhuge F, Zhu L P, Ye Z Z, Ma D W, Lu J G, Huang J Y, Wang F Z, Ji Z G and Zhang S B 2005 Appl. Phys. Lett. 87 092103
[7] Xue S W, Zu X T, Shao L X, Yuan Z L, Xiang X and Deng H 2008 Chin. Phys. B 17 2240
[8] Graubner S, Neumann C, Volbers N, Meyer B K, Bläsing J and Krost A 2007 Appl. Phys. Lett. 90 042103
[9] Zhang D H, Wang Q P and Xue Z Y 2003 Acta Phys. Sin. 52 1484 (in Chinese)
[10] Chen L X, Li C M, Yin W L, Liu J L, Hei L F and Lu F X 2011 Diamond & Related Materials 20 527
[11] Khan A and Kordesch M E 2005 Physica E 30 51
[12] Lia C, Fanga G J, Fu Q, Su F H, Li G H, Wu X G and Zhao X Z 2006 J. Cryst. Growth 292 19
[13] Zhang Z Y, Bao C G, Yao W J, Ma S Q, Zhang L L and Hou S Z 2011 Superlattices and Microstructures 49 644
[14] Rahman A M A and Narusawa T 2008 Physics Research B 266 1378
[15] Bachari E M, Baud G, Ben Amor S and Jacquet M 1999 Thin Solid Films 348 165
[16] Lin S S, Huang J L and Lii D F 2004 Surface and Coatings Technology 176 173
[17] Chen M, Wang X, Yu Y H, Pei Z L, Bai X D, Sun C, Huang R F and Wen L S 2000 Appl. Surf. Sci. 158 134
[18] Islam M N, Ghosh T B, Chopra K L and Acharya H N 1996 Thin Solid Films 280 20

[1]	Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films Qing-Fen Jiang(姜清芬), Jie Lian(连洁), Min-Ju Ying(英敏菊), Ming-Yang Wei(魏铭洋), Chen-Lin Wang(王宸琳), and Yu Zhang(张裕). Chin. Phys. B, 2021, 30(9): 097801.
[2]	Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content Rui Li(李睿), Ming-Sheng Xu(徐明升), Peng Wang(汪鹏), Cheng-Xin Wang(王成新), Shang-Da Qu(屈尚达), Kai-Ju Shi(时凯居), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Chin. Phys. B, 2021, 30(4): 047801.
[3]	Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si Jian-Kai Xu(徐健凯), Li-Juan Jiang(姜丽娟), Qian Wang(王茜), Quan Wang(王权), Hong-Ling Xiao(肖红领), Chun Feng(冯春), Wei Li(李巍), and Xiao-Liang Wang(王晓亮). Chin. Phys. B, 2021, 30(11): 118101.
[4]	Performance of beam-type piezoelectric vibration energy harvester based on ZnO film fabrication and improved energy harvesting circuit Shan Gao(高珊), Chong-Yang Zhang(张重扬), Hong-Rui Ao(敖宏瑞), Hong-Yuan Jiang(姜洪源). Chin. Phys. B, 2020, 29(8): 088401.
[5]	Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Shizheng Yang(杨施政), Xiaoran Cui(崔晓然), Zhichuan Niu(牛智川), Yimen Zhang(张义门), Yuming Zhang(张玉明). Chin. Phys. B, 2019, 28(2): 028101.
[6]	Effect of growth temperature of GaAs_xSb_1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate Jing Zhang(张静), Hong-Liang Lv(吕红亮), Hai-Qiao Ni(倪海桥), Shi-Zheng Yang(杨施政), Xiao-Ran Cui(崔晓然), Zhi-Chuan Niu(牛智川), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明). Chin. Phys. B, 2019, 28(11): 118102.
[7]	Propagations of Rayleigh and Love waves in ZnO films/glass substrates analyzed by three-dimensional finite element method Yan Wang(王艳), Ying-Cai Xie(谢英才), Shu-Yi Zhang(张淑仪), Xiao-Dong Lan(兰晓东). Chin. Phys. B, 2017, 26(8): 087703.
[8]	Cubic ZnO films obtained at low pressure by molecular beam epitaxy Wang Xiao-Dan (王小丹), Zhou Hua (周华), Wang Hui-Qiong (王惠琼), Ren Fei (任飞), Chen Xiao-Hang (陈晓航), Zhan Hua-Han (詹华瀚), Zhou Ying-Hui (周颖慧), Kang Jun-Yong (康俊勇). Chin. Phys. B, 2015, 24(9): 097106.
[9]	Microstructure and optical properties of nitrogen-doped ZnO film Zhao Xian-Wei (赵显伟), Gao Xiao-Yong (郜小勇), Chen Xian-Mei (陈先梅), Chen Chao (陈超), Zhao Meng-Ke (赵孟珂 ). Chin. Phys. B, 2013, 22(2): 024202.
[10]	Nanoscaled ZnO films used as enhanced substrates for fluorescence detection of dyes Liu Yan-Song(刘艳松), Yi Fu, Ramachandram Badugu, Joseph R. Lakowicz, and Xu Xiao-Liang(许小亮) . Chin. Phys. B, 2012, 21(3): 037803.
[11]	Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition Lin Zhi-Yu (林志宇), Zhang Jin-Cheng (张进成), Zhou Hao (周昊), Li Xiao-Gang (李小刚), Meng Fan-Na (孟凡娜), Zhang Lin-Xia (张琳霞), Ai Shan (艾姗), Xu Sheng-Rui (许晟瑞), Zhao Yi (赵一), Hao Yue (郝跃). Chin. Phys. B, 2012, 21(12): 126804.
[12]	Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition Li Hai-Ou(李海鸥), Huang Wei(黄伟), Tang Chak Wah(邓泽华), Deng Xiao-Fang(邓小芳), and Lau Kei May(刘纪美). Chin. Phys. B, 2011, 20(6): 068502.
[13]	PEDOT:PSS Schottky contacts on annealed ZnO films Zhu Ya-Bin(朱亚彬), Hu Wei(胡伟), Na Jie(纳杰), He Fan(何帆), Zhou Yue-Liang(周岳亮), and Chen Cong(陈聪) . Chin. Phys. B, 2011, 20(4): 047301.
[14]	Effects of V/III ratio on the growth of a-plane GaN films Xie Zi-Li(谢自力), Li Yi(李弋), Liu Bin(刘斌), Zhang Rong(张荣), Xiu Xiang-Qian(修向前), Chen Peng(陈鹏), and Zheng You-Liao(郑有炓) . Chin. Phys. B, 2011, 20(10): 106801.
[15]	Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate Xu Sheng-Rui(许晟瑞), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Xue Xiao-Yong(薛晓咏), Li Pei-Xian(李培咸), Li Jian-Ting(李建婷), Lin Zhi-Yu(林志宇), Liu Zi-Yang(刘子扬), Ma Jun-Cai(马俊彩), He Qiang(贺强), and Lü Ling(吕玲) . Chin. Phys. B, 2011, 20(10): 107802.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Zn/O ratio and oxygen chemical state of nanocrystalline ZnO films grown at different temperatures

Cite this article:

Online attention