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Chin. Phys. B, 2011, Vol. 20(4): 047301    DOI: 10.1088/1674-1056/20/4/047301

PEDOT:PSS Schottky contacts on annealed ZnO films

Zhu Ya-Bin(朱亚彬)a)†, Hu Wei(胡伟)a), Na Jie(纳杰)a), He Fan(何帆)a), Zhou Yue-Liang(周岳亮) b), and Chen Cong(陈聪)b)
a School of Science, Beijing Jiaotong University, Beijing 100044, China; b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  Polycrystalline ZnO and ITO films on SiO2 substrates are prepared by radio frequency (RF) reactive magnetron sputtering. Schottky contacts are fabricated on ZnO films by spin coating with a high conducting polymer, poly(3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) as the metal electrodes. The current–voltage measurements for samples on unannealed ZnO films exhibit rectifying behaviours with a barrier height of 0.72 eV (n=1.93). The current for the sample is improved by two orders of magnitude at 1 V after annealing ZnO film at 850 oC, whose barrier height is 0.75 eV with an ideality factor of 1.12. X-ray diffraction, atomic force microscopy and scanning electron microscopy are used to study the properties of the PEDOT:PSS/ZnO/ITO/SiO2. The results are useful for applications such as metal–semiconductor field-effect transistors and UV photodetectors.
Keywords:  Schottky contacts      rectifying characteristic      annealed ZnO film  
Received:  12 October 2010      Revised:  07 December 2010      Accepted manuscript online: 
PACS:  73.40.Sx (Metal-semiconductor-metal structures)  
  73.61.Ga (II-VI semiconductors)  
  73.50.-h (Electronic transport phenomena in thin films)  
Fund: Project supported by the Fundamental Research Funds for the Central Universities of China (Grant No. 2009JBM098).

Cite this article: 

Zhu Ya-Bin(朱亚彬), Hu Wei(胡伟), Na Jie(纳杰), He Fan(何帆), Zhou Yue-Liang(周岳亮), and Chen Cong(陈聪) PEDOT:PSS Schottky contacts on annealed ZnO films 2011 Chin. Phys. B 20 047301

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