Effects of V/III ratio on the growth of a-plane GaN films

doi:10.1088/1674-1056/20/10/106801

Abstract The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal-organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomic force microscopy results show that triangular pits are formed at a relatively high V/III ratio, while a relatively low V/III ratio can enhance the lateral growth rate along the c-axis direction. The higher V/III ratio leads to a high density of pits in comparison with the lower V/III ratio. The surface morphology is improved greatly by using a low V/III ratio of 500 and the roughness mean square of the surface is only 3.9 nm. The high resolution X-ray diffraction characterized crystal structural results show that the rocking curve full width at half maximum along the m axis decreases from 0.757° to 0.720°, while along the c axis increases from 0.220° to 0.251° with the V/III increasing from 500 μmol/min to 2000 μmol/min, which indicates that a relatively low V/III ratio is conducible to the c-axis growth of a-plane GaN.

Keywords: V/III ratio a-plane GaN non-polar metal-organic chemical vapour deposition

Received: 24 November 2010
Revised: 28 May 2011
Accepted manuscript online:

PACS:	68.43.Jk	(Diffusion of adsorbates, kinetics of coarsening and aggregation)
	66.30.H-	(Self-diffusion and ionic conduction in nonmetals)
	68.37.Hk	(Scanning electron microscopy (SEM) (including EBIC))
	68.55.A-	(Nucleation and growth)

Fund: Project supported by the Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301900), High Technology Research Program of China (Grant No. 2009AA03A198), the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003), the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178), and the Research Funds from NJUYangzhou Institute of Opto-electronics, China.

Cite this article:

Xie Zi-Li(谢自力), Li Yi(李弋), Liu Bin(刘斌), Zhang Rong(张荣), Xiu Xiang-Qian(修向前), Chen Peng(陈鹏), and Zheng You-Liao(郑有炓) Effects of V/III ratio on the growth of a-plane GaN films 2011 Chin. Phys. B 20 106801

[1]	Nakamura T, Mochizuki S, Terao S, Sano T, Iwaya M, Kamiyama S, Amano H and Akasaki I 2002 J. Cryst. Growth 237 1129
[2]	Khan M A, Yang J W, Simin G, Gaska R, Shur M S and Bykhovski A D 1999 Appl. Phys. Lett. 75 2806
[3]	Liu L and Edgar J H 2002 Mater. Sci. Eng. R 37 61
[4]	Deguchi T, Sekiguchi K, Nakamura A, Sota T, Matsuo R, Chichibu S and Nakamura S 1999 J. Acoust. Soc. Jpn. (E) 38 L914
[5]	Walterelt P, Brandt O, Trampert A, Grahn H T, Mennlger J, Ramstelner M, Relche M and Ploog K H 2000 Nature (London) 406 865
[6]	Chitnis A, Chen C, Adivarahan V, Shatalov M, Kuokstis E, Mandavilli V, Yang J and Khan M A 2004 Appl. Phys. Lett. 84 3663
[7]	Chen C Q, Gaevski M E, Sun W H, Kuokstis E, Zhang J P, Fareed R S Q, Wang H M, Yang J W, Simin G, Khan M A, Maruska H P, Hill D W, Chou M M C and Chai B 2004 Appl. Phys. Lett. 81 3194
[8]	Haskell B A, Chakraborty A, Wu F, Sasano H, Fini P T, DenBaars S P, Speck J S and Nakamura S 2005 J. Electron. Mater. 34 357
[9]	Li D S, Chen H, Yu H B, Han Y J, Zheng X H, Huang Q and Zhou J M 2004 J. Crystal Growth 263 76
[10]	Ni X, Fu Y, Moon Y T, Biyikli N and Morkoc H 2006 J. Crystal Growth 290 166
[11]	Haskell B A, Baker T J, McLaurin M B, Wu F, Fini P T, DenBaars S P, Speck J S and Nakamura S 2005 Appl. Phys. Lett. 86 11917
[12]	Zhao L B, Yu T J, Wu J J, Yang Z J and Zhang G Y 2010 Chin. Phys. B 19 018101
[13]	Wu F, Craven M D, Lim S H and Speck J S 2003 J. Appl. Phys. 94 942
[14]	Myers T H, VanMil B L, Holbert J J, Peng C Y, Stinespring C D, Alam J, Freitas Jr J A, Dmitriev V A, Pechnikov A, Shapovalova Y and Ivantsov V 2002 J. Crystal Growth 246 244
[15]	Ni X, Fu Y, Moon Y T, Biyikli N and Morkoc H 2006 J. Crystal Growth 290 166
[16]	Craven M D, Lim S H, Wu F, Speak J S and Denbaars S P 2002 Appl. Phys. Lett. 81 469
[17]	Xie Z L, Zhang R, Han P, Zhou S M, Liu B, Xiu X Q, Chen P, Shi Y and Zheng Y D 2008 Chin. Phys. Lett. 25 2614
[18]	Hiramatsu K, Nishiyama K, Motogaito A, Miyake H, Iyechika Y and Maeda T 1999 Phys. Stat. Sol. (a) 176 535

[1]	Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates Yu Lei (于磊), Zhang Yuan-Wen (张苑文), Li Kai (李凯), Pi Hui (皮辉), Diao Jia-Sheng (刁家声), Wang Xing-Fu (王幸福), Hu Wen-Xiao (胡文晓), Zhang Chong-Zhen (张崇臻), Song Wei-Dong (宋伟东), Shen Yue (沈岳), Li Shu-Ti (李述体). Chin. Phys. B, 2015, 24(7): 077801.
[2]	Effect of the thickness of InGaN interlayer on a-plane GaN epilayer Wang Jian-Xia (王建霞), Wang Lian-Shan (汪连山), Zhang Qian (张谦), Meng Xiang-Yue (孟祥岳), Yang Shao-Yan (杨少延), Zhao Gui-Juan (赵桂娟), Li Hui-Jie (李辉杰), Wei Hong-Yuan (魏鸿源), Wang Zhan-Guo (王占国). Chin. Phys. B, 2015, 24(2): 026802.
[3]	Zn/O ratio and oxygen chemical state of nanocrystalline ZnO films grown at different temperatures Fan Hai-Bo(范海波), Zheng Xin-Liang(郑新亮), Wu Si-Cheng(吴思诚), Liu Zhi-Gang(刘志刚), and Yao He-Bao(姚合宝) . Chin. Phys. B, 2012, 21(3): 038101.
[4]	Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition Lin Zhi-Yu (林志宇), Zhang Jin-Cheng (张进成), Zhou Hao (周昊), Li Xiao-Gang (李小刚), Meng Fan-Na (孟凡娜), Zhang Lin-Xia (张琳霞), Ai Shan (艾姗), Xu Sheng-Rui (许晟瑞), Zhao Yi (赵一), Hao Yue (郝跃). Chin. Phys. B, 2012, 21(12): 126804.
[5]	Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition Li Hai-Ou(李海鸥), Huang Wei(黄伟), Tang Chak Wah(邓泽华), Deng Xiao-Fang(邓小芳), and Lau Kei May(刘纪美). Chin. Phys. B, 2011, 20(6): 068502.
[6]	Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate Xu Sheng-Rui(许晟瑞), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Xue Xiao-Yong(薛晓咏), Li Pei-Xian(李培咸), Li Jian-Ting(李建婷), Lin Zhi-Yu(林志宇), Liu Zi-Yang(刘子扬), Ma Jun-Cai(马俊彩), He Qiang(贺强), and Lü Ling(吕玲) . Chin. Phys. B, 2011, 20(10): 107802.
[7]	Broadband non-polarizing beam splitter based on guided mode resonance effect Ma Jian-Yong(麻健勇), Xu Cheng(许程), Qiang Ying-Huai(强颖怀), and Zhu Ya-Bo(朱亚波) . Chin. Phys. B, 2011, 20(10): 104209.
[8]	GaP layers grown on GaN with and without buffer layers Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Fan Guang-Han(范广涵), Zhang Yong(章勇), Zheng Shu-Wen(郑树文), and Su Jun(苏军). Chin. Phys. B, 2010, 19(10): 107206.
[9]	Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films Zhao Lu-Bing(赵璐冰), Yu Tong-Jun(于彤军), Wu Jie-Jun(吴洁君), Yang Zhi-Jian(杨志坚), and Zhang Guo-Yi(张国义). Chin. Phys. B, 2010, 19(1): 018101.
[10]	Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition Liang Song (梁松), Zhu Hong-Liang (朱洪亮), Pan Jiao-Qing (潘教青), Zhao Ling-Juan (赵玲娟), Wang Lu-Feng (王鲁峰), Zhou Fan (周帆), Shu Hui-Yun (舒惠云), Bian Jing (边静), An Xin (安欣), Wang Wei (王圩). Chin. Phys. B, 2008, 17(11): 4300-4304.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Effects of V/III ratio on the growth of a-plane GaN films

Cite this article:

Online attention