Compound buried layer SOI high voltage device with a step buried oxide

doi:10.1088/1674-1056/20/7/077304

Abstract A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed. The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer. Furthermore, holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer. Consequently, the electric fields in both the thin LBO and the thick UBO are enhanced by these holes, leading to an improved breakdown voltage. The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer. Moreover, SBO CBL SOI can also reduce the self-heating effect.

Keywords: breakdown voltage step buried oxide compound buried layer self-heating effect

Received: 12 January 2011
Revised: 22 February 2011
Accepted manuscript online:

PACS:	73.40.Ty	(Semiconductor-insulator-semiconductor structures)
	73.90.+f	(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
	73.61.Ng	(Insulators)

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Wang Yuan-Gang(王元刚), Luo Xiao-Rong(罗小蓉), Ge Rui(葛锐), Wu Li-Juan(吴丽娟), Chen Xi（陈曦), Yao Guo-Liang(姚国亮), Lei Tian-Fei(雷天飞), Wang Qi(王琦), Fan Jie(范杰), and Hu Xia-Rong(胡夏融) Compound buried layer SOI high voltage device with a step buried oxide 2011 Chin. Phys. B 20 077304

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