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Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device |
Wu Jian(吴剑)a), Lü Xue-Qin(吕雪芹) a), Jin Peng(金鹏)a)†, Meng Xian-Quan(孟宪权)b), and Wang Zhan-Guo(王占国)a) |
a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China |
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Abstract A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under 3-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.
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Received: 06 November 2010
Revised: 17 December 2010
Accepted manuscript online:
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PACS:
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42.60.Fc
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(Modulation, tuning, and mode locking)
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78.67.Hc
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(Quantum dots)
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81.07.Ta
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(Quantum dots)
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81.16.Dn
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(Self-assembly)
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Fund: Project supported by the National Key Basic Research and Development Program of China (Grant No. 2006CB604904) and the
National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, 60776037, and 10775106). |
Cite this article:
Wu Jian(吴剑), Lü Xue-Qin(吕雪芹), Jin Peng(金鹏), Meng Xian-Quan(孟宪权), and Wang Zhan-Guo(王占国) Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 2011 Chin. Phys. B 20 064202
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