Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures

doi:10.1088/1674-1056/19/5/057303

Abstract Current transport mechanism in Ni-germanide/n-type Ge Schottky diodes is investigated using current--voltage characterisation technique with annealing temperatures from 300 $^\circ$C to 500 $^\circ$C. Based on the current transport model, a simple method to extract parameters of the NiGe/Ge diode is presented by using the $I$--$V$ characteristics. Parameters of NiGe/n-type Ge Schottky diodes fabricated for testing in this paper are as follows: the ideality factor $n$, the series resistance $R_{\rm s}$, the zero-field barrier height $\phi _{\rm b0}$, the interface state density $D_{\rm it}$, and the interfacial layer capacitance $C_{\rm i}$. It is found that the ideality factor $n$ of the diode increases with the increase of annealing temperature. As the temperature increases, the interface defects from the sputtering damage and the penetration of metallic states into the Ge energy gap are passivated, thus improving the junction quality. However, the undesirable crystallisations of Ni-germanide are observed together with NiGe at a temperature higher than 400 $^\circ$C. Depositing a very thin ($\sim $1 nm) heavily Ge-doped $n^{+}$ Ge intermediate layer can improve the NiGe film morphology significantly.

Keywords: NiGe Schottky diode barrier height parameter extraction

Received: 21 December 2008
Revised: 08 December 2009
Accepted manuscript online:

PACS:	85.30.Kk	(Junction diodes)
	85.30.Hi	(Surface barrier, boundary, and point contact devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	81.40.Ef	(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
	68.55.-a	(Thin film structure and morphology)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.~60936005 and 60976068), the New Century Excellent Talents of Ministry of Education of China (Grant No.~NCET-05-0851), the Cultivation Fund of Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No.~708083), and the Applied Materials Innovation Fund (Grant No.~XA-AM-200701).

Cite this article:

Liu Hong-Xia(刘红侠), Wu Xiao-Feng(吴笑峰), Hu Shi-Gang(胡仕刚), and Shi Li-Chun(石立春) Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures 2010 Chin. Phys. B 19 057303

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Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures

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