Comparative studies of Ge and Si p-channel metal－oxide－semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

doi:10.1088/1674-1056/19/5/057302

Abstract Ge and Si p-channel metal--oxide--semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance--voltage curve hysteresis of Ge metal--oxide--semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO$_{x}$ (1 < $x$ < 2). Effective hole mobilities of Ge and Si transistors are extracted by using a channel conductance method. The peak hole mobilities of Si and Ge transistors are 33.4 cm²/(V$\cdot$s) and 81.0 cm²/(V$\cdot$s), respectively. Ge transistor has a hole mobility 2.4 times higher than that of Si control sample.

Keywords: Ge substrate transistor HfSiON hole mobility

Received: 18 October 2009
Revised: 09 November 2009
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.40.Hp	(Lithography, masks and pattern transfer)

Fund: Project supported by the National Basic Research Program of China (Grant No.~2006CB302704).

Cite this article:

Hu Ai-Bin(胡爱斌) and Xu Qiu-Xia(徐秋霞) Comparative studies of Ge and Si p-channel metal－oxide－semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate 2010 Chin. Phys. B 19 057302

[1]	Bardeen J and Brattain W H 1948 Phys. Rev. 74 230
[2]	International technology roadmap for semiconductors, available online: http://www.itrs.net
[3]	Robertson J 2006 Rep. Prgo. Phys. 69 327
[4]	Han D D, Kang J F, Liu X Y, Sun L, Luo H and Han R Q 2007 Chin. Phys. 16 245
[5]	Chui C O, Kim H, Chi D, Triplett B B, McIntyre P C and Saraswat K C 2002 IEDM Tech. Dig. San Francisco, CA, USA Dec. 2002 p437
[6]	Sze S M and Ng K K 2007 Physics of Semiconductor Devices (Third Edition) p302
[7]	Okumura H, Akane T and Matsumoto S 1998 Appl. Surf. Sci. 125 125
[8]	Xu G B and Xu Q X 2009 Chin. Phys. B 18 768
[9]	SRIM 2006.02, available online: http://www.srim.com
[10]	Plummer J D, Deal M D and Griffin P B 2000 Silicon VLSI Technology Fundamentals, Practice and Modeling (Beijing: Prentice Hall) p453--458
[11]	NIST X-ray Photoelectron Spectroscopy Database, available online: http://srdata.nist.gov/xps/
[12]	Kang C S, Cho H, Onishi K, Nieh R, Choi R, Gopalan S, Krishnan S, Han J H and Lee J C 2002 Appl. Phys. Lett. 81 2593
[13]	Hu A B and Xu Q X 2009 Journal of Semiconductors 30 104002
[14]	Arora N 1999 MOSFET Models for VLSI Circuit Simulation - Theory and Practice (Beijing: Springer) p482--486 (in Chinese)
[15]	Chau R, Datta S, Doczy M, Doyle B, Kavalieros J and Metz M 2004 IEEE Electron Device Lett. 25 408
[16]	Casse M, Thevenod M, Guillaumot B Tosti L Martin F, Mitard J, Weber O, Andrieu F, Ernst T, Reimbold G, Billon T, Mouis M and Boulanger F 2006 IEEE Trans. Electron Device 53 759

[1]	SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂). Chin. Phys. B, 2023, 32(4): 047702.
[2]	A 4H-SiC trench IGBT with controllable hole-extracting path for low loss Lijuan Wu(吴丽娟), Heng Liu(刘恒), Xuanting Song(宋宣廷), Xing Chen(陈星), Jinsheng Zeng(曾金胜), Tao Qiu(邱滔), and Banghui Zhang(张帮会). Chin. Phys. B, 2023, 32(4): 048503.
[3]	High performance carrier stored trench bipolar transistor with dual shielding structure Jin-Ping Zhang(张金平), Hao-Nan Deng(邓浩楠), Rong-Rong Zhu(朱镕镕), Ze-Hong Li(李泽宏), and Bo Zhang(张波). Chin. Phys. B, 2023, 32(3): 038501.
[4]	Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Chin. Phys. B, 2023, 32(2): 028504.
[5]	High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). Chin. Phys. B, 2023, 32(1): 018503.
[6]	A field-effect WSe₂/Si heterojunction diode Rui Yu(余睿), Zhe Sheng(盛喆), Wennan Hu(胡文楠), Yue Wang(王越), Jianguo Dong(董建国), Haoran Sun(孙浩然), Zengguang Cheng(程增光), and Zengxing Zhang(张增星). Chin. Phys. B, 2023, 32(1): 018505.
[7]	Bioinspired tactile perception platform with information encryption function Zhi-Wen Shi(石智文), Zheng-Yu Ren(任征宇), Wei-Sheng Wang(王伟胜), Hui Xiao(肖惠), Yu-Heng Zeng(曾俞衡), and Li-Qiang Zhu(竺立强). Chin. Phys. B, 2022, 31(9): 098506.
[8]	Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Chin. Phys. B, 2022, 31(8): 086106.
[9]	Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇). Chin. Phys. B, 2022, 31(8): 088101.
[10]	Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate Yun-Long He(何云龙), Fang Zhang(张方), Kai Liu(刘凯), Yue-Hua Hong(洪悦华), Xue-Feng Zheng(郑雪峰),Chong Wang(王冲), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(6): 068501.
[11]	An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智). Chin. Phys. B, 2022, 31(6): 068502.
[12]	Spin transport in epitaxial Fe₃O₄/GaAs lateral structured devices Zhaocong Huang(黄兆聪), Wenqing Liu(刘文卿), Jian Liang(梁健), Qingjie Guo(郭庆杰), Ya Zhai(翟亚), and Yongbing Xu(徐永兵). Chin. Phys. B, 2022, 31(6): 068505.
[13]	MOS-based model of four-transistor CMOS image sensor pixels for photoelectric simulation Bing Zhang(张冰), Congzhen Hu(胡从振), Youze Xin(辛有泽), Yaoxin Li(李垚鑫), Zhuoqi Guo(郭卓奇), Zhongming Xue(薛仲明), Li Dong(董力), Shanzhe Yu(于善哲), Xiaofei Wang(王晓飞), Shuyu Lei(雷述宇), and Li Geng(耿莉). Chin. Phys. B, 2022, 31(5): 058503.
[14]	DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate Zi-Xin Chen(陈子馨), Wei-Jing Liu(刘伟景), Jiang-Nan Liu(刘江南), Qiu-Hui Wang(王秋蕙), Xu-Guo Zhang(章徐国), Jie Xu(许洁), Qing-Hua Li(李清华), Wei Bai(白伟), and Xiao-Dong Tang(唐晓东). Chin. Phys. B, 2022, 31(5): 058501.
[15]	Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(5): 058505.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Comparative studies of Ge and Si p-channel metal－oxide－semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

Cite this article:

Online attention